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IPP093N06N3GHKSA1

Description
MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size686KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPP093N06N3GHKSA1 Overview

MOSFET

IPP093N06N3GHKSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time18 weeks
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)43 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.0093 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)200 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Id\Q
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