MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8/16-bit Data Bus
Static RAM Card
MF365A-J8CATXX
MF3129-J8CATXX
MF3257-J8CATXX
MF3513-J8CATXX
Connector Type
MF31M1-J8CATXX
Two- piece 68-pin
MF32M1-J8CATXX
MF34M1-J8CATXX
1. DESCRIPTION
Mitsubishi’s Static RAM cards provide large memory
capacities on a device approximately the size of a
credit card (85.6mm×54mm×3.3mm). The cards use
a 8/16 bit data-bus.
Available in 64KB, 128KB, 256KB, 512KB,
1 MB, 2 MB and 4 MB capacities, Mitsubishi’s
SRAM cards conform to the PC Card Standard.
Mitsubishi achieved high density memory, while
maintaining credit size by using a thin small outline
packaging technology (TSOP). The TSOP surpasses
conventional memory card chip-on-board packaging
technology where larger, surface-mount devices
result in a tradeoff between card size and optimum
memory density. The TSOP, with external leads
spaced on 20-mil centers, is over four times smaller
than standard equivalent pin count surface-mount
packages. This allows up to 8 memory ICs (plus
interface circuitry) to be mounted in a card that in
only 3.3mm thick.
4. PRODUCT LIST
Item
Type name
MF365A-J8CATXX
MF3129-J8CATXX
MF3257-J8CATXX
MF3513-J8CATXX
MF31M1-J8CATXX
MF32M1-J8CATXX
MF34M1-J8CATXX
Memory
capacity
64KB
128KB
256KB
512KB
1MB
2MB
4MB
2. FEATURES
nUses
TSOP (Thin Small Outline Package) to
achieve very high memory density coupled with
high reliability, without enlarging card size
nOne
to 8 memory ICs can be mounted in a
card that is only 3.3mm thick
nElectrostatic
discharge protection to 15kV
nBuffered
interface
nWrite
protect switch
nAttribute
memory
n68pin
nBuilt-in
auxiliary battery
3. APPLICATIONS
nOffice
automation
nData
Communication
nComputers
nIndustrial
nTelecommunications nConsumer
Data Bus
width(bits)
Attribute
memory
Auxiliary
battery
8/16
8KB
E PROM
2
YES
MITSUBISHI
ELECTRIC
1/16
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
5. SUMMARY
MF3XXX-J8CATXX series is the Static RAM cards which has 8/16 bit changeable data-bus width.
The card has a replaceable lithium main battery to maintain data in memory and has an auxiliary battery to
maintain data in memory while the main battery is replaced. When the card is not use or the supply voltage
drops, the main battery will automatically maintain data in memory.
6. FUNCTIONAL DESCRIPTION
The function of the card is determined by the combination of the following five control signals,
REG#, CE1#, CE2#, OE#, WE#; active low signals.
(Please
refer to section 10
FUNCTION TABLE
on page 5)
(
1)COMMON MEMORY FUNCTION
)
When REG# signal is high level, the common memory area is selected.
(
a)READ MODE
)
To read, WE# is set high level and CE1# or CE2# is set low level and the memory address is applied at inputs
A0-A21(4MB). Setting OE# low level executes the reading with output at data-bus. It is available to make the
following functions according to the combination of CE1# and CE2#.
When CE1# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card.
The data can be dealt with lower data-bus(D0-D7).
When both CE1# and CE2# are set low level, the card operates as a 16 bit data-bus width card.
At this mode LSB of address-bus
(A0)
is ignored.
In addition odd byte can be accessed through upper data-bus(D8-D15) when CE1# is set high level and CE2# is
set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system
(A0
is
ignored).
When both CE1# and CE2# are set high level, the card becomes a standby mode where the card consumes
low power and the data-bus is placed in high impedance state
(above
functions of CE1# and CE2# are the same
as in the following modes).
When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is
placed in high impedance state.
(
b)WRITE MODE
)
To write, the memory address is first applied at inputs A0-A21(4MB) and the data is applied at output pins.
Setting CE1# or CE2# low level, WE# low level and OE# high level executes the writing.
(
2)ATTRIBUTE MEMORY FUNCTION
)
When REG# is set low level, the attribute memory area is selected. MF3XXX-J8CATXX series accommodates
an attribute memory of 8KB E
2
PROM on even addresses.
(
a)READ MODE
)
First set CE1# and CE2# low level or high level and select residing address
(even
address). Data can be read by
setting OE# low level and WE# high level.
(
b)WRITE MODE
)
Writing can be done either by byte-mode or page-mode. The page-mode write is the function to be able to write
data of 32 bytes in a single write cycle. The page address is set by A6 to A13
(Please
note that attribute memory
exists in even bytes only). To write, set OE# high level and WE# low level. Data will be latched at the rising
edge of WE#. After the first load unless WE# changes from high level to low level within 30µs, the automatic
erase/program starts and completes in 10ms or before. Page data can be latched if WE# transits from high level
to low level before the 30µs. Page-mode write also executes erase/program operation within 10ms.
The page address must be maintained during the page data loading.
(
3)BATTERY
)
When the card is used for long periods of time, eventually battery exhaustion occurs. If such a situation is
encountered, replace any exhausted battery with a new one as directed in section 21.2
″
REPLACING BATTERY
″
(page
14).
The replacement battery model number is indicated under section 21
″
BATTERY SPECIFICATIONS
″(page
14).
7. WRITE PROTECT MODE
When the write protect switch is switched on, this card goes into a write protect mode that can read but not
write data. In this mode, WP pin becomes “H” level.
At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin
indicates “L” level).
MITSUBISHI
ELECTRIC
2/16
Apr. 1999 Rev. 1.2
Talking
京公网安备 11010802033920号
EEWORLD
