MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR12DSM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
•
Small Size
•
Passivated Die for Reliability and Uniformity
•
Low Level Triggering and Holding Characteristics
•
Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
G
ORDERING INFORMATION
•
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR12DSN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR12DSNT4
•
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR12DSN–1
A
MCR12DSM
MCR12DSN
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
SCRs
12 AMPERES RMS
600 thru 800 VOLTS
A
K
K
A
G
CASE 369A–13
STYLE 4
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 110°C, RGK = 1.0 K
W
)
On–State RMS Current
(All Conduction Angles; TC = 75°C)
Average On–State Current (All Conduction Angles; TC = 75°C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width
≤
10
m
sec, TC = 75°C)
Average Gate Power
(t = 8.3 msec, TC = 75°C)
Peak Gate Current (Pulse Width
≤
10
m
sec, TC = 75°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM
VRRM
MCR12DSM
MCR12DSN
IT(RMS)
12
IT(AV)
ITSM
100
I2t
PGM
5.0
PG(AV)
0.5
IGM
TJ
Tstg
2.0
–40 to 110
–40 to 150
Amps
°C
41
A2sec
Watts
7.6
600
800
Amps
Value
Unit
Volts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes (3)
Symbol
R
q
JC
R
q
JA
R
q
JA
Max
2.2
88
80
Unit
°C/W
TL
260
°C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K
W
; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
©
Motorola, Inc. 1997
1
MCR12DSM MCR12DSN
ELECTRICAL CHARACTERISTICS
(TJ = 25°C; RGK = 1.0 K
W
unless otherwise noted)
Characteristics
Peak Reverse Gate Blocking Voltage
(IGR = 10
m
A)
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM) (1)
Peak Reverse Gate Blocking Current
(VGR = 10 V)
Peak On–State Voltage (2)
(ITM = 24 A)
Gate Trigger Current (Continuous dc) (3)
(VD = 12 V, RL = 100
W
, TJ = 25°C)
(VD = 12 V, RL = 100
W
, TJ = –40°C)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
W
, TJ = 25°C)
(VD = 12 V, RL = 100
W
, TJ = –40°C)
(VD = 12 V, RL = 100
W
, TJ = 110°C)
Holding Current
(VD = 12 V, I(init) = 200 mA, TJ = 25°C)
(VD = 12 V, I(init) = 200 mA, TJ = –40°C)
Latching Current
(VD = 12 V, IG = 2.0 mA, TJ = 25°C)
(VD = 12 V, IG = 2.0 mA, TJ = –40°C)
Symbol
VGRM
10
IDRM
IRRM
TJ = 25°C
TJ = 110°C
IRGM
—
VTM
—
IGT
5.0
—
VGT
0.45
—
0.2
IH
0.5
—
IL
0.5
—
1.0
—
6.0
10
1.0
—
6.0
10
mA
0.65
—
—
1.0
1.5
—
mA
12
—
200
300
1.4
2.1
—
1.2
—
—
—
—
10
500
12.5
18
Min
Typ
Max
Unit
Volts
m
A
m
A
Volts
m
A
Volts
DYNAMIC CHARACTERISTICS
Characteristics
Total Turn–On Time
(Source Voltage = 12 V, RS = 6.0 K
W
, IT = 16 A(pk), RGK = 1.0 K
W
)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10
m
s)
Critical Rate of Rise of Off–State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
RGK = 1.0 K
W
, TJ = 110°C)
Symbol
tgt
—
dv/dt
2.0
10
—
2.0
5.0
Min
Typ
Max
Unit
m
s
V/
m
s
(1) Ratings apply for negative gate voltage or RGK = 1.0 K
W
. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(2) Pulse Test; Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
(3) Does not include RGK current.
2
Motorola Thyristor Device Data
MCR12DSM MCR12DSN
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
110
105
100
95
90
85
80
75
70
0
dc
16
14
12
10
8.0
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
120°
180°
a
= Conduction
Angle
a
90°
60°
dc
a
= 30°
a
= Conduction
Angle
1.0
2.0
a
180°
a
= 30°
3.0
4.0
60°
5.0
90°
6.0
120°
7.0
8.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. On–State Power Dissipation
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)
100
MAXIMUM @ TJ = 110°C
10
r(t) , TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
TYPICAL @ TJ = 25°C
1.0
0.1
Z
q
JC(t) = R
q
JC(t)
S
r(t)
MAXIMUM @ TJ = 25°C
1.0
0.1
0
1.0
2.0
3.0
4.0
5.0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
0.01
0.1
1.0
10
100
1000
10 K
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
1000
RGK = 1.0 K
W
100
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT (
m
A)
1.0
10
GATE OPEN
1.0
–40 –25
0.1
–10
5.0
20
35
50
65
80
95
110
–40 –25
–10
5.0
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
Motorola Thyristor Device Data
3
MCR12DSM MCR12DSN
10
RGK = 1.0 K
W
IH , HOLDING CURRENT (mA)
IL, LATCHING CURRENT (mA)
10
RGK = 1.0 K
W
1.0
1.0
0.1
–40 –25
–10
5.0
20
35
50
65
80
95
110
0.1
–40 –25
–10
5.0
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
10
TJ = 25°C
IH, HOLDING CURRENT (mA)
8.0
1000
STATIC dv/dt (V/
m
s)
100
70°C
90°C
TJ = 110°C
6.0
IGT = 25
m
A
4.0
IGT = 10
m
A
10
2.0
0
100
1.0
1000
RGK, GATE–CATHODE RESISTANCE (OHMS)
10 K
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
Figure 9. Holding Current versus
Gate–Cathode Resistance
Figure 10. Exponential Static dv/dt versus
Gate–Cathode Resistance and Junction
Temperature
1000
1000
TJ = 110°C
400 V
STATIC dv/dt (V/
m
s)
STATIC dv/dt (V/
m
s)
100
VD = 800 V
TJ = 110°C
100
IGT = 25
m
A
IGT = 10
m
A
10
600 V
VPK = 800 V
10
1.0
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
1.0
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
Figure 11. Exponential Static dv/dt versus
Gate–Cathode Resistance and Peak Voltage
Figure 12. Exponential Static dv/dt versus
Gate–Cathode Resistance and Gate Trigger
Current Sensitivity
4
Motorola Thyristor Device Data
MCR12DSM MCR12DSN
PACKAGE DIMENSIONS
–T–
B
V
R
4
SEATING
PLANE
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
–––
0.030
0.050
0.138
–––
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
–––
0.77
1.27
3.51
–––
S
1
2
3
A
K
F
L
D
G
2 PL
Z
U
J
H
0.13 (0.005)
T
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
M
STYLE 4:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
CASE 369A–13
ISSUE Y
Motorola Thyristor Device Data
5
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