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MCM67A618FN12

Description
64K x 18 Bit Asychronous/Latched Address Fast Static RAM
Categorystorage    storage   
File Size106KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MCM67A618FN12 Overview

64K x 18 Bit Asychronous/Latched Address Fast Static RAM

MCM67A618FN12 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Parts packaging codeLCC
package instructionQCCJ, LDCC52,.8SQ
Contacts52
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time12 ns
Other featuresBYTE WRITE
I/O typeCOMMON
JESD-30 codeS-PQCC-J52
JESD-609 codee0
length19.1262 mm
memory density1179648 bi
Memory IC TypeCACHE TAG SRAM
memory width18
Number of functions1
Number of ports1
Number of terminals52
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX18
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC52,.8SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum seat height4.57 mm
Maximum standby current0.02 A
Minimum standby current4.75 V
Maximum slew rate0.28 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyBICMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
width19.1262 mm
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCM67A618/D
64K x 18 Bit Asynchronous/
Latched Address Fast Static RAM
The MCM67A618 is a 1,179,648 bit latched address static random access
memory organized as 65,536 words of 18 bits, fabricated with Motorola’s high–
performance silicon–gate BiCMOS technology. The device integrates a 64K x 18
SRAM core with advanced peripheral circuitry consisting of address and data in-
put latches, active low chip enable, separate upper and lower byte write strobes,
and a fast output enable. This device has increased output drive capability sup-
ported by multiple power pins.
Address, data in, and chip enable latches are provided. When latch enables
(AL for address and chip enables and DL for data in) are high, the address, data
in, and chip enable latches are in the transparent state. If latch enables are tied
high the device can be used as an asynchronous SRAM. When latch enables are
low the address, data in, and chip enable latches are in the latched state. This
input latch simplifies read and write cycles by guaranteeing address and data–in
hold time in a simple fashion.
Dual write enables (LW and UW) are provided to allow individually writeable
bytes. LW controls DQ0 – DQ8 (the lower bits) while UW controls DQ9 – DQ17
(the upper bits).
Six pair of power and ground pins have been utilized and placed on the pack-
age for maximum performance.
The MCM67A618 will be available in a 52–pin plastic leaded chip carrier
(PLCC).
This device is ideally suited for systems that require wide data bus widths,
cache memory, and tag RAMs.
Single 5 V
±
5% Power Supply
Fast Access Times: 10/12/15 ns Max
Byte Writeable via Dual Write Enables
Separate Data Input Latch for Simplified Write Cycles
Address and Chip Enable Input Latches
Common Data Inputs and Data Outputs
Output Enable Controlled Three–State Outputs
3.3 V I/O Compatible
High Board Density 52–Lead PLCC Package
MCM67A618
FN PACKAGE
PLASTIC
CASE 778–02
PIN ASSIGNMENT
A6
A7
E
UW
LW
VCC
V SS
DL
AL
G
A8
A9
A10
DQ9
DQ10
VCC
VSS
DQ11
DQ12
DQ13
DQ14
VSS
VCC
DQ15
DQ16
DQ17
3 2 1 52 51 50 49 48 47
46
8
45
9
44
10
43
11
42
12
41
13
40
14
39
15
38
16
37
17
36
18
35
19
34
20 21 22 23 24 25 26 27 28 29 30 31 32 33
A5
A4
A3
A2
A1
A0
V SS
V CC
A15
A14
A13
A12
A11
7 6 5 4
DQ8
DQ7
DQ6
VCC
VSS
DQ5
DQ4
DQ3
DQ2
VSS
VCC
DQ1
DQ0
PIN NAMES
A0 – A15 . . . . . . . . . . . . . . . . Address Inputs
AL . . . . . . . . . . . . . . . . . . . . . . Address Latch
DL . . . . . . . . . . . . . . . . . . . . . . . . . Data Latch
LW . . . . . . . . . . . . Lower Byte Write Enable
UW . . . . . . . . . . . . Higher Byte Write Enable
E . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable
G . . . . . . . . . . . . . . . . . . . . . . Output Enable
DQ0 – DQ17 . . . . . . . . . . . Data Input/Output
VCC . . . . . . . . . . . . . . . . + 5 V Power Supply
VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . Ground
All power supply and ground pins must be con-
nected for proper operation of the device.
REV 4
5/95
©
Motorola, Inc. 1994
MOTOROLA FAST SRAM
MCM67A618
1

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Description 64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K x 18 Bit Asychronous/Latched Address Fast Static RAM
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) -
package instruction QCCJ, LDCC52,.8SQ PLASTIC, LCC-52 PLASTIC, LCC-52 -
Reach Compliance Code unknow unknow unknow -
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A -
Maximum access time 12 ns 15 ns 10 ns -
Other features BYTE WRITE BYTE WRITE BYTE WRITE -
I/O type COMMON COMMON COMMON -
JESD-30 code S-PQCC-J52 S-PQCC-J52 S-PQCC-J52 -
JESD-609 code e0 e0 e0 -
length 19.1262 mm 19.1262 mm 19.1262 mm -
memory density 1179648 bi 1179648 bi 1179648 bi -
Memory IC Type CACHE TAG SRAM CACHE TAG SRAM CACHE TAG SRAM -
memory width 18 18 18 -
Number of functions 1 1 1 -
Number of ports 1 1 1 -
Number of terminals 52 52 52 -
word count 65536 words 65536 words 65536 words -
character code 64000 64000 64000 -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C 70 °C -
organize 64KX18 64KX18 64KX18 -
Output characteristics 3-STATE 3-STATE 3-STATE -
Exportable YES YES YES -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code QCCJ QCCJ QCCJ -
Encapsulate equivalent code LDCC52,.8SQ LDCC52,.8SQ LDCC52,.8SQ -
Package shape SQUARE SQUARE SQUARE -
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER -
Parallel/Serial PARALLEL PARALLEL PARALLEL -
power supply 5 V 5 V 5 V -
Certification status Not Qualified Not Qualified Not Qualified -
Maximum seat height 4.57 mm 4.57 mm 4.57 mm -
Maximum standby current 0.02 A 0.02 A 0.02 A -
Minimum standby current 4.75 V 4.75 V 4.75 V -
Maximum slew rate 0.28 mA 0.265 mA 0.29 mA -
Maximum supply voltage (Vsup) 5.25 V 5.25 V 5.25 V -
Minimum supply voltage (Vsup) 4.75 V 4.75 V 4.75 V -
Nominal supply voltage (Vsup) 5 V 5 V 5 V -
surface mount YES YES YES -
technology BICMOS BICMOS BICMOS -
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form J BEND J BEND J BEND -
Terminal pitch 1.27 mm 1.27 mm 1.27 mm -
Terminal location QUAD QUAD QUAD -
width 19.1262 mm 19.1262 mm 19.1262 mm -
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