MCM63Z819TQ15 datasheet, PDF - EEWORLD Datasheet

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MCM63Z819TQ15: Description128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM; Categorystorage storage; File Size148KB，20 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MCM63Z819TQ15 Overview

128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM

MCM63Z819TQ15 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	15 ns
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	4718592 bi
Memory IC Type	ZBT SRAM
memory width	18
Number of functions	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX18
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MCM63Z737/D

Advance Information

128K x 36 and 256K x 18 Bit

Flow–Through ZBT™ RAM

Synchronous Fast Static RAM

The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide

zero bus turnaround. The ZBT RAM allows 100% use of bus cycles during

back–to–back read/write and write/read cycles. The MCM63Z737 is organized

as 128K words of 36 bits each and the MCM63Z819 is organized as 256K words

of 18 bits each, fabricated with high performance silicon gate CMOS technology.

This device integrates input registers, a 2–bit address counter, and high speed

SRAM onto a single monolithic circuit for reduced parts count in communication

applications. Synchronous design allows precise cycle control with the use of an

external clock (CK). CMOS circuitry reduces the overall power consumption of

the integrated functions for greater reliability.

Addresses (SA), data inputs (DQ), and all control signals except output enable

(G) and linear burst order (LBO) are clock (CK) controlled through positive–

edge–triggered noninverting registers.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (CK) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

•

3.3 V LVTTL and LVCMOS Compatible

•

MCM63Z737/MCM63Z819–11 = 11 ns Access/15 ns Cycle (66 MHz)

MCM63Z737/MCM63Z819–15 = 15 ns Access/20 ns Cycle (50 MHz)

•

Selectable Burst Sequencing Order (Linear/Interleaved)

•

Internally Self–Timed Write Cycle

•

Single–Cycle Deselect

•

Byte Write Control

•

ADV Controlled Burst

•

100–Pin TQFP Package

MCM63Z737

MCM63Z819

TQ PACKAGE

TQFP

CASE 983A–01

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by

Micron Technology, Inc. and Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

2/6/98

Motorola, Inc. 1998

MOTOROLA FAST SRAM

MCM63Z737

MCM63Z819

MCM63Z819TQ15 Related Products

	MCM63Z819TQ15	MCM63Z819TQ15R	MCM63Z819TQ11	MCM63Z737TQ15R	MCM63Z737TQ11R	MCM63Z737TQ15	MCM63Z737	MCM63Z737TQ11
Description	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	-	Motorola ( NXP )
Parts packaging code	QFP	QFP	QFP	QFP	-	QFP	-	QFP
package instruction	LQFP,	LQFP,	LQFP,	LQFP,	TQFP-100	LQFP,	-	LQFP,
Contacts	100	100	100	100	-	100	-	100
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	-	unknow
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	-	3A991.B.2.A
Maximum access time	15 ns	15 ns	11 ns	15 ns	11 ns	15 ns	-	11 ns
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	-	R-PQFP-G100
JESD-609 code	e0	e0	e0	e0	e0	e0	-	e0
length	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	-	20 mm
memory density	4718592 bi	4718592 bi	4718592 bi	4718592 bi	4718592 bi	4718592 bi	-	4718592 bi
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	-	ZBT SRAM
memory width	18	18	18	36	36	36	-	36
Number of functions	1	1	1	1	1	1	-	1
Number of terminals	100	100	100	100	100	100	-	100
word count	262144 words	262144 words	262144 words	131072 words	131072 words	131072 words	-	131072 words
character code	256000	256000	256000	128000	128000	128000	-	128000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	-	70 °C
organize	256KX18	256KX18	256KX18	128KX36	128KX36	128KX36	-	128KX36
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	-	LQFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	-	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Maximum seat height	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	-	1.6 mm
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	-	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	-	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	-	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	-	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	-	0.65 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	-	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
width	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	-	14 mm

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