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MCM63Z819TQ11

Description
128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
Categorystorage    storage   
File Size148KB,20 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MCM63Z819TQ11 Overview

128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM

MCM63Z819TQ11 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time11 ns
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density4718592 bi
Memory IC TypeZBT SRAM
memory width18
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCM63Z737/D
Advance Information
128K x 36 and 256K x 18 Bit
Flow–Through ZBT™ RAM
Synchronous Fast Static RAM
The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide
zero bus turnaround. The ZBT RAM allows 100% use of bus cycles during
back–to–back read/write and write/read cycles. The MCM63Z737 is organized
as 128K words of 36 bits each and the MCM63Z819 is organized as 256K words
of 18 bits each, fabricated with high performance silicon gate CMOS technology.
This device integrates input registers, a 2–bit address counter, and high speed
SRAM onto a single monolithic circuit for reduced parts count in communication
applications. Synchronous design allows precise cycle control with the use of an
external clock (CK). CMOS circuitry reduces the overall power consumption of
the integrated functions for greater reliability.
Addresses (SA), data inputs (DQ), and all control signals except output enable
(G) and linear burst order (LBO) are clock (CK) controlled through positive–
edge–triggered noninverting registers.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (CK) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
3.3 V LVTTL and LVCMOS Compatible
MCM63Z737/MCM63Z819–11 = 11 ns Access/15 ns Cycle (66 MHz)
MCM63Z737/MCM63Z819–15 = 15 ns Access/20 ns Cycle (50 MHz)
Selectable Burst Sequencing Order (Linear/Interleaved)
Internally Self–Timed Write Cycle
Single–Cycle Deselect
Byte Write Control
ADV Controlled Burst
100–Pin TQFP Package
MCM63Z737
MCM63Z819
TQ PACKAGE
TQFP
CASE 983A–01
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by
Micron Technology, Inc. and Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
2/6/98
©
Motorola, Inc. 1998
MOTOROLA FAST SRAM
MCM63Z737
D
MCM63Z819
1

MCM63Z819TQ11 Related Products

MCM63Z819TQ11 MCM63Z819TQ15R MCM63Z819TQ15 MCM63Z737TQ15R MCM63Z737TQ11R MCM63Z737TQ15 MCM63Z737 MCM63Z737TQ11
Description 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible - incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) - Motorola ( NXP )
Parts packaging code QFP QFP QFP QFP - QFP - QFP
package instruction LQFP, LQFP, LQFP, LQFP, TQFP-100 LQFP, - LQFP,
Contacts 100 100 100 100 - 100 - 100
Reach Compliance Code unknow unknow unknow unknow unknow unknow - unknow
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A - 3A991.B.2.A
Maximum access time 11 ns 15 ns 15 ns 15 ns 11 ns 15 ns - 11 ns
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 - R-PQFP-G100
JESD-609 code e0 e0 e0 e0 e0 e0 - e0
length 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm - 20 mm
memory density 4718592 bi 4718592 bi 4718592 bi 4718592 bi 4718592 bi 4718592 bi - 4718592 bi
Memory IC Type ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM - ZBT SRAM
memory width 18 18 18 36 36 36 - 36
Number of functions 1 1 1 1 1 1 - 1
Number of terminals 100 100 100 100 100 100 - 100
word count 262144 words 262144 words 262144 words 131072 words 131072 words 131072 words - 131072 words
character code 256000 256000 256000 128000 128000 128000 - 128000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C - 70 °C
organize 256KX18 256KX18 256KX18 128KX36 128KX36 128KX36 - 128KX36
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code LQFP LQFP LQFP LQFP LQFP LQFP - LQFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE - FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
Maximum seat height 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm - 1.6 mm
Maximum supply voltage (Vsup) 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V - 3.465 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V - 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V - 3.3 V
surface mount YES YES YES YES YES YES - YES
technology CMOS CMOS CMOS CMOS CMOS CMOS - CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL - COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING - GULL WING
Terminal pitch 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm - 0.65 mm
Terminal location QUAD QUAD QUAD QUAD QUAD QUAD - QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
width 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm - 14 mm
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