Ordering number : ENA0273B
FW4604
Power MOSFET
Features
•
30V, 6A, 39m
Ω
, –30V, –4.5A, 65m
Ω
, Complementary Dual SOIC8
http://onsemi.com
On-state resistance
Nch : RDS(on)1=30m
Ω
(typ.)
Pch : RDS(on)1=50m
Ω
(typ.)
•
•
•
•
4.5V drive
Halogen free compliance
Nch + Pch MOSFET
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Tstg
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm
×0.8mm)
1unit, PW≤10s
When mounted on ceramic substrate (2000mm
×0.8mm),
PW≤10s
2
2
Conditions
N-channel
30
±20
6
6.5
24
1.8
2.2
150
P-channel
-
-30
±20
-
-4.5
-
-5
-
-18
Unit
V
V
A
A
A
W
W
°C
°C
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
8
5
0.22
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW4604-TL-2W
Packing Type : TL
Marking
6.0
3.9
0.375
1
1.27
4
0.445
0.254
(GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
W4604
TL
0.715
LOT No.
Electrical Connection
8
7
6
5
1.375
0.175
1.55
1
2
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM/61312 TKIM/12512PA TKIM TC-00002681 No. A0273-1/7
FW4604
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--4.5A, VGS=0V
VDS=--15V, VGS=--10V, ID=--4.5A
VDS=--10V, f=1MHz
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--4.5A
ID=--4.5A, VGS=--10V
ID=--2.5A, VGS=--4.5V
--1.7
5.2
50
85
430
105
75
7.5
See specified Test Circuit.
42
43
40
10
2.0
2.5
-
-0.86
--1.5
65
119
--30
--1
±10
--2.6
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=6A, VGS=0V
VDS=15V, VGS=10V, ID=6A
See specified Test Circuit.
VDS=10V, f=1MHz
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4.5V
1.7
3
30
50
490
85
45
8
45
31
28
9.1
1.7
1.7
0.84
1.2
39
70
30
1
±10
2.6
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Switching Time Test Circuit
[N-channel]
10V
0V
VIN
VDD=15V
[P-channel]
0V
--10V
VIN
VDD= --15V
VIN
PW=10μs
D.C.≤1%
G
D
ID=6A
RL=2.5Ω
VOUT
PW=10μs
D.C.≤1%
VIN
D
ID= --4.5A
RL=3.3Ω
VOUT
G
P.G
FW4604
50Ω
S
P.G
FW4604
50Ω
S
Ordering Information
Device
FW4604-TL-2W
Package
SOIC8
Shipping
2,500pcs./reel
memo
Pb-Free and Halogen Free
No. A0273-2/7
FW4604
16.0V
10.0V
6
ID -- VDS
V
4.0
V
[Nch]
3.5V
10
9
8
ID -- VGS
[Nch]
VDS=10V
5
6.0V
4 .5
Drain Current, ID -- A
Drain Current, ID -- A
4
7
6
5
4
3
3.0V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
1
2
3
25
°
VGS=2.5V
1
C
1
2
Ta=7
5
°
C
3
--25
°
C
2
4
5
IT16717
Drain to Source Voltage, VDS -- V
100
RDS(on) -- VGS
IT16716
Gate to Source Voltage, VGS -- V
100
[Nch]
Ta=25°C
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
[Nch]
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
80
ID=3A
6A
80
60
60
3A
I =
5V, D
=4.
VGS
6A
,I =
0.0V D
=1
VGS
40
40
20
20
0
0
2
4
6
8
10
12
14
16
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate to Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
IT16718
Ambient Temperature, Ta --
°
C
10
7
5
3
2
1.0
7
5
[Nch]
VDS=10V
IS -- VSD
IT16719
[Nch]
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
2
7
5
3
2
0.1
0.01
Ta
25
75
°
C
°
C
0.1
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
100
7
SW Time -- ID
td(off)
5 7 10
IT16720
0.01
0
0.2
0.4
Ta=7
5
°
C
25
°
C
--25
°
C
0.6
0.8
1.0
-2
=-
C
5
°
Source Current, IS -- A
3
3
2
1.0
1.2
IT16721
[Nch]
1000
7
5
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
[Nch]
f=1MHz
Switching Time, SW Time -- ns
5
3
2
Ciss, Coss, Crss -- pF
3
2
tf
td(on)
10
7
5
3
2
1.0
0.1
tr
100
7
5
3
2
Coss
Crss
VDD=15V
VGS=10V
2
3
5
7
1.0
2
3
5
7
10
10
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
IT16723
Drain Current, ID -- A
IT16722
Drain to Source Voltage, VDS -- V
No. A0273-3/7
FW4604
10
9
VGS -- Qg
VDS=15V
ID=6A
[Nch]
Gate to Source Voltage, VGS -- V
8
100
7
5
3
2
ASO
IDP=24A (PW
≤
10
μs)
10
[Nch]
Drain Current, ID -- A
7
6
5
4
3
2
1
0
0
2
4
6
8
10
IT16724
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ID=6A
10
10
s
op
era
tio
Operation in this
n
area is limited by RDS(on).
DC
10
s
m
0m
s
s
1m
0
μ
s
0.01
0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate (2000mm
2
×0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
IT16725
Total Gate Charge, Qg -- nC
--4.5
ID -- VDS
0V
--4
.
--3
.5
V
Drain to Source Voltage, VDS -- V
--8
--7
--6
--5
--4
--3
--2
--1
[Pch]
ID -- VGS
[Pch]
VDS= --10V
--16.0V
--10.0V
--4.0
--3.5
--4.
5
V
V
Drain Current, ID -- A
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
--3.0V
Drain Current, ID -- A
--6
.0
Ta=
7
0
--1
--2
5
°
C
VGS= --2.5V
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
25
°
--3
C
--25
°
C
--4
--5
IT16727
Drain to Source Voltage, VDS -- V
200
RDS(on) -- VGS
IT16726
Gate to Source Voltage, VGS -- V
200
[Pch]
Ta=25°C
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
[Pch]
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
180
160
140
120
100
80
60
40
20
0
0
--2
--4
--6
--8
--10
--12
180
160
140
120
100
80
60
40
20
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
ID= --2.5A
--4.5A
= --2
V, I D
.5
= --4
VGS
.5A
V GS=
-4.5
, I D= -
--10.0V
A
--14
--16
Gate to Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
IT16728
Ambient Temperature, Ta --
°
C
--10
7
5
3
2
--1.0
7
5
[Pch]
IS -- VSD
IT16729
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
VDS= --10V
[Pch]
VGS=0V
2
7
5
3
2
0.1
--0.01
°
C
75
--0.1
7
5
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
5 7 --10
IT16730
--0.01
0
--0.2
--0.4
Ta=7
5
°
C
25
°
C
--0.6
3
2
--25
°
C
--0.8
1.0
Ta
C
5
°
--2
=
°
C
25
Source Current, IS -- A
3
--1.0
--1.2
IT16731
Diode Forward Voltage, VSD -- V
No. A0273-4/7
FW4604
100
7
SW Time -- ID
td(off)
[Pch]
1000
7
5
Ciss, Coss, Crss -- VDS
Ciss
[Pch]
f=1MHz
Switching Time, SW Time -- ns
5
3
2
Ciss, Coss, Crss -- pF
tf
3
2
10
7
5
3
2
1.0
--0.1
tr
td(on)
100
7
5
3
2
Coss
Crss
VDD= --15V
VGS= --10V
2
3
5
7
--1.0
2
3
5
Drain Current, ID -- A
--10
--9
VGS -- Qg
--10
IT16732
7
10
0
--5
--10
--15
--20
--25
--30
IT16733
Drain to Source Voltage, VDS -- V
--100
7
5
3
2
[Pch]
ASO
[Pch]
Gate to Source Voltage, VGS -- V
VDS= --15V
ID= --4.5A
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
2
4
6
8
10
IT16734
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
10
0
1m
μ
s
ID= --4.5A
10
s
10
ms
0m
s
DC
10s
op
era
tio
Operation in this
n
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (2000mm
2
×0.8mm)
5 7--0.1
2 3
5 7--1.0 2 3
5 7--10
2 3
IDP= --18A (PW
≤
10
μs)
--0.01
--0.01 2 3
Total Gate Charge, Qg -- nC
2.4
PD -- Ta
Drain to Source Voltage, VDS -- V
Allowable Power Dissipation(FET1), PD -- W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
[Nch/Pch]
PD (FET1) -- PD (FET2)
5 7
--100
IT16735
[Nch/Pch]
Allowable Power Dissipation, PD -- W
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
When mounted on ceramic substrate
(2000mm
2
×0.8mm),
PW≤10s
When mounted on ceramic substrate
(2000mm
2
×0.8mm),
PW≤10s
t
To
al
di
ss
ip
ni
1u
o
ati
t
n
75
100
125
150
175
IT16736
2.2
2.4
Ambient Temperature, Ta --
°C
Allowable Power Dissipation(FET2), PD -- W
IT16737
No. A0273-5/7
Power technology
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