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BCV-49-E6327

Description
Darlington Transistors NPN Silicn Darlingtn TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size514KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BCV-49-E6327 Overview

Darlington Transistors NPN Silicn Darlingtn TRANSISTOR

BCV-49-E6327 Parametric

Parameter NameAttribute value
Product CategoryDarlington Transistors
ManufacturerInfineon
RoHSDetails
ConfigurationSingle
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max60 V
Emitter- Base Voltage VEBO10 V
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.5 A
Maximum Collector Cut-off Current0.1 uA
Mounting StyleSMD/SMT
Package / CaseSOT-89
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
DC Collector/Base Gain hfe Min2000
DC Current Gain hFE Max2000
Height1.5 mm
Length4.5 mm
Minimum Operating Temperature- 65 C
Factory Pack Quantity1000
Width2.5 mm
Unit Weight0.004603 oz
BCV29, BCV49
NPN Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV28, BCV48 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
1
2
2
Type
BCV29
BCV49
Maximum Ratings
Parameter
Collector-emitter voltage
BCV29
BCV49
Collector-base voltage
BCV29
BCV49
Emitter-base voltage
Collector current
Marking
EF
EG
1=B
1=B
Pin Configuration
2=C
2=C
Symbol
V
CEO
30
60
V
CBO
40
80
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
10
500
800
100
200
1
150
Package
SOT89
SOT89
Value
Unit
V
3=E
3=E
mA
Peak collector current,
t
p
10 ms
Base current
Peak base current
Total power dissipation-
T
S
130 °C
Junction temperature
Storage temperature
W
°C
-65 ... 150
1
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