BLS6G3135-20 datasheet, PDF - EEWORLD Datasheet

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BLS6G3135-20: DescriptionRF MOSFET Transistors LDMOS TNS; CategoryDiscrete semiconductor The transistor; File Size250KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BLS6G3135-20 Overview

RF MOSFET Transistors LDMOS TNS

BLS6G3135-20 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	2.1 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BLS6G3135-20;

BLS6G3135S-20

LDMOS S-Band radar power transistor

Rev. 4 — 11 March 2013

Product data sheet

1. Product profile

1.1 General description

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz

range.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C; t

= 300





= 10 %; I

= 50 mA; in a class-AB

production test circuit.

Mode of operation f

(GHz)

Pulsed RF

(V)

(W)

(dB)

15.5



(%)

(ns)

3.1 to 3.5 32

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits



Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage

of 32 V, an I

of 50 mA, a t

of 300

s

and a



of 10 %:



Output power = 20 W



Power gain = 15.5 dB



Efficiency = 45 %



Integrated ESD protection



Excellent ruggedness



High efficiency



Excellent thermal stability



Designed for broadband operation (3.1 GHz to 3.5 GHz)



Internally matched for ease of use



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

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