HiPerFET
TM
Power MOSFET
Single Die MOSFET
Preliminary data sheet
Symbol Test Conditions
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
Terminal (current limit)
T
C
= 25°C; Note 1
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
IXFE 180N10
V
DSS
I
D25
R
DS(on)
= 100 V
= 176 A
Ω
=
8 mΩ
t
rr
≤
250 ns
Maximum Ratings
100
100
±20
±30
176
100
720
180
60
3
5
500
-55 ... +150
150
-55 ... +150
300
2500
3000
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
ISOPLUS 227
TM
(IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
Conforms to SOT-227B outline
•
Encapsulating
epoxy meets
UL 94 V-0, flammability classification
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
Mounting torque
Terminal connection torque
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
19
g
•
Fast
intrinsic Rectifier
Applications
•
DC-DC converters
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20V,
V
GS
= 0V
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10V, I
D
=
I
T
Note 2
Characteristic Values
Min.
Typ.
Max.
100
2
4
±100
T
J
= 25°C
T
J
= 125°C
100
2
8
V
V
nA
µA
mA
m
Ω
•
Synchronous rectification
•
Battery chargers
•
Switched-mode and resonant-mode
power supplies
•
DC choppers
•
Temperature and lighting
•
Low voltage relays
Advantages
•
Easy to mount
controls
•
Space savings
•
High power density
© 2002 IXYS All rights reserved
98902 (2/02)
IXFE 180N10
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
Note:
I
T
= 90 A
0.07
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
=
I
T
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
=
I
T
R
G
= 1
Ω
(External),
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 10 V; I
D
= 60A, Note 2
Characteristic Values
Min. Typ. Max.
60
90
9100
3200
1600
50
90
140
65
360
65
190
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
ISOPLUS-227 B
Source-Drain Diode
(T
J
= 25°C, unless otherwise specified)
Symbol
Test Conditions
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Notes:
V
GS
= 0
Repetitive;
Note1
I
F
= 100 A, V
GS
= 0 V,
Note2
I
F
= 50 A, -di/dt = 100 A/µs, V
R
= 50 V
Characteristic Values
Min. Typ. Max.
180
720
1.5
250
1.1
13
A
A
V
ns
µ
C
A
Please see IXFN180N10 data
sheet for characteristic curves.
1. Pulse width limited by T
JM.
2. Pulse test, t
≤
300 ms, duty cycle d
≤
2 %
3.
I
T
= 90A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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