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BC847AWT1

Description
Bipolar Transistors - BJT 100mA 50V NPN
CategoryDiscrete semiconductor    The transistor   
File Size138KB,13 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 100mA 50V NPN

BC847AWT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code419-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.0024 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC846, SBC846, BC847,
SBC847, BC848 Series
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Emitter-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector Current
Continuous
Symbol
V
CEO
Value
65
45
30
V
80
50
30
V
6.0
6.0
5.0
100
mAdc
Unit
V
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
V
CBO
XX MG
G
V
EBO
I
C
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55
to
+150
Unit
mW
°C/W
°C
©
Semiconductor Components Industries, LLC, 2013
September, 2013
Rev. 9
1
Publication Order Number:
BC846AWT1/D

BC847AWT1 Related Products

BC847AWT1 BC848CWT1
Description Bipolar Transistors - BJT 100mA 50V NPN Bipolar Transistors - BJT 100mA 30V NPN
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Contains lead Contains lead
Maker ON Semiconductor ON Semiconductor
Parts packaging code SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Manufacturer packaging code 419-04 419-04
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 110 420
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.0024 W 0.0024 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn80Pb20)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
Base Number Matches 1 1
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