STAC150V2-350E
RF power transistor:
HF/VHF/UHF RF power N-channel MOSFET
Datasheet
−
production data
Features
■
■
■
■
■
■
■
Operating frequencies up to 40.68 MHz
Excellent thermal stability
P
OUT
= 350 W with 17 dB gain @
40.68 MHz/150 V
Designed for class E operation
V
(BR)DSS
> 700 V
STAC air cavity packaging technology -
STAC
®
package
In compliance with the 2002/95/EC1 European
directive
STAC177B
Figure 1.
Pin connection
1 (drain)
Description
The STAC150V2-350E is a high voltage N-
channel MOS field-effect RF power transistor
especially designed for 150V Industrial RF power
class E generators such as PECVD plasma
sputtering, flat panel and solar cells
manufacturing equipments. STAC150V2-350E
benefits from the latest generation of STAC
®
air
cavity package which exhibits a 25% lower
thermal resistance compared to equivalent
ceramic package.
4 (source)
2 (source)
3 (gate)
5 (source) on
backside
Table 1.
Device summary
Marking
150V2-350
(1)
Base qty.
25 pcs
Package
STAC177B
Packaging
Plastic tray
Order code
STAC150V2-350E
1. For more details please refer to
Chapter 6: Marking, packing and shipping specifications..
January 2013
This is information on a product in full production.
Doc ID 024198 Rev 1
1/12
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12
Contents
STAC150V2-350E
Contents
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
1.2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
4
5
6
7
Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 024198 Rev 1
Electrical characteristics
STAC150V2-350E
2
Electrical characteristics
T
CASE
= +25
o
C
2.1
Static
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
TH
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
I
DS
= 250
μA
V
GS
= 0 V
V
GS
= 20 V
I
D
= 250
μA
V
GS
= 10 V
V
DS
= TBD V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
I
D
= 7.5 A
I
D
= TBD A
V
DS
= 150 V
V
DS
= 150 V
V
DS
= 150 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
TBD
1300
115
15
V
DS
= 150 V
V
DS
= 0 V
3
Static
Test conditions
Min
700
1
0.4
6.5
10
Typ
Max
Unit
V
μA
μA
V
V
S
pF
pF
pF
2.2
Dynamic
Table 5.
Symbol
P
OUT
Gain
Dynamic (pulse test: 1ms - 10%)
Test conditions
V
DD
= 150 V, P
IN
= 12 W, f = 40.68 MHz
V
DD
= 150 V, P
IN
= 12 W, f = 40.68 MHz
60
Min
350
Typ
500
16.5
70
65:1
Max
-
-
-
-
Unit
W
dB
%
VSWR
Efficiency V
DD
= 150 V, P
OUT
= 500 W, f = 40.68 MHz
Load
V
DD
= 150 V, P
OUT
= 500 W, f = 40.68 MHz
mismatch
4/12
Doc ID 024198 Rev 1
Embedded System
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