30V N-Channel Power MOSFET
General Description
The AAT9460 is a low threshold MOSFET designed
for applications in DC-DC Converter, battery, cell
phone, and PDA markets. Using AnalogicTech™'s
ultra-high density proprietary TrenchDMOS™ tech-
nology, this product demonstrates high power han-
dling and small size.
AAT9460
Features
•
•
•
V
DS(MAX)
= 30V
I
D(MAX)
1
= 3.4A @ 25°C
Low R
DS(ON)
:
• 58 mΩ @ V
GS
= 4.5V
• 84 mΩ @ V
GS
= 2.5V
Applications
•
•
•
•
DC-DC Converters
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
SC59 Package
Top View
D
3
Preliminary Information
1
G
2
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
30
±12
±3.4
±2.7
±8.0
1.0
1.1
0.7
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25°C
T
A
= 70°C
W
°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Typical Junction-to-Ambient steady state
1
Maximum Junction-to-Ambient t<5 seconds
Typical Junction-to-Foot
1
1
Value
140
115
45
Units
°C/W
9460.2003.10.0.63
1
30V N-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(T
J
=25°C unless otherwise noted)
Conditions
Min
30
46
65
8
0.6
±100
1
5
9
5
0.9
1
6
3
30
8
1.3
1.0
58
84
AAT9460
Typ
Max
Units
V
mΩ
A
V
nA
µA
S
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250µA
V
GS
=-4.5V, I
D
=3.4A
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-2.5V, I
D
=2.8A
I
D(ON)
On-State Drain Current
2
V
GS
=4.5V, V
DS
=5V (Pulsed)
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250µA
I
GSS
Gate-Body Leakage Current
V
GS
=±12V, V
DS
=0V
V
GS
=0V, V
DS
=30V
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=24V, T
J
=70°C
3
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=3.4A
Dynamic Characteristics
3
Q
G
Total Gate Charge
V
DS
=15V, R
D
=4.2Ω, V
GS
=4.5V
Q
GS
Gate-Source Charge
V
DS
=15V, R
D
=4.2Ω, V
GS
=4.5V
Q
GD
Gate-Drain Charge
V
DS
=15V, R
D
=4.2Ω, V
GS
=4.5V
t
D(ON)
Turn-ON Delay
V
DS
=15V, R
D
=4.2Ω, V
GS
=4.5V,
t
R
Turn-ON Rise Time
V
DS
=15V, R
D
=4.2Ω, V
GS
=4.5V,
t
D(OFF)
Turn-OFF Delay
V
DS
=15V, R
D
=4.2Ω, V
GS
=4.5V,
t
F
Turn-OFF Fall Time
V
DS
=15V, R
D
=4.2Ω, V
GS
=4.5V,
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=3.4A
I
S
Continuous Diode Current
1
nC
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
ns
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 5 second pulse
on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. R
θJF
+ R
θFA
= R
θJA
where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. R
θJF
is guaranteed by
design; however, R
θFA
is determined by PCB design. Actual maximum continuous current is limited by the application’s design.
Note 2: Pulse test: Pulse width = 300 µs.
Note 3: Guaranteed by design. Not subject to production testing.
2
9460.2003.10.0.63
30V N-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Output Characteristics
8
AAT9460
Transfer Characteristics
8
5V
4.5V
6
3.5V
3V
2.5V
2V
I
D
(A)
V
D
=V
G
6
I
DS
(A)
4
4
125°C
2
2
25°C
0
0.5
1
1.5
-55°C
2
2.5
3
1.5V
0
0
0.5
1
1.5
2
0
V
GS
(V)
V
DS
(V)
On-Resistance vs. Drain Current
120
100
120
100
On-Resistance vs. Gate to Source Voltage
I
D
= 3.6A
R
DS(ON)
(mΩ)
Ω
R
DS(ON)
(mΩ)
Ω
80
60
40
20
0
0
80
60
40
20
0
V
GS
= 2.5V
V
GS
= 4.5V
2
4
6
8
0
1
2
3
4
5
I
D
(A)
V
GS
(V)
On-Resistance vs. Junction Temperature
1.6
0.3
Threshold Voltage
I
D
= 250µA
Normalized R
DS(ON)
V
GS(th)
Variance (V)
-25
0
25
50
75
100
125
150
1.4
1.2
1
0.8
0.6
-50
V
GS
= 4.5V
I
D
= 3.6A
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
-50
-25
0
25
50
75
100
125
150
T
J
(ºC)
T
J
(°C)
9460.2003.10.0.63
3
30V N-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Gate Charge
5
4
3
2
1
0
0
1
2
3
4
5
6
0.1
0
0.2
0.4
0.6
0.8
1
1.2
AAT9460
Source-Drain Diode Forward Voltage
10
V
D
=15A
I
D
=3.6A
I
S
(A)
T
J
= 150°C
1
V
GS
(V)
T
J
= 25°C
Q
G
, Charge (nC)
V
SD
(V)
Capacitance
1000
800
600
400
200
0
0
5
10
15
20
25
30
Capacitance (pF)
C
ISS
C
RSS
C
OSS
V
DS
(V)
4
9460.2003.10.0.63
30V N-Channel Power MOSFET
Ordering Information
Package
SC59
Marking
HA
Part Number (Tape and Reel)
AAT9460IGY-T1
AAT9460
Package Information
SC59
2.85
±
0.15
1.575
±
0.125
0.95 BSC
1.90 BSC
2.80
±
0.20
0.075
±
0.075
1.20
±
0.30
0.40
±
0.10
×
3
0.45
±
0.15
All dimensions in millimeters.
0.14
±
0.06
4°
±
4°
9460.2003.10.0.63
5
FPGA/CPLD
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