1N5062BKTIN/LEAD datasheet, PDF

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1N5062BKTIN/LEAD: DescriptionRectifier Diode, 1 Element, 1A, 800V V(RRM),; CategoryDiscrete semiconductor diode; File Size404KB，2 Pages; ManufacturerCentral Semiconductor

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1N5062BKTIN/LEAD Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM),

1N5062BKTIN/LEAD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
Maximum non-repetitive peak forward current	40 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO
Base Number Matches	1

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1N5059

1N5060

1N5061

1N5062

w w w. c e n t r a l s e m i . c o m

GLASS PASSIVATED

SILICON RECTIFIERS

1.0 AMP, 200 THRU 800 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 1N5059 series

types are silicon rectifiers manufactured in a hermetically

sealed, glass passivated package, designed for general

purpose applications where high reliability is desired.

Higher voltage devices are available in the CPR1-010

series.

MARKING: FULL PART NUMBER

GPR-1A CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL 1N5059 1N5060 1N5061 1N5062 UNITS

Peak Repetitive Reverse Voltage

VRRM

200

400

600

800

DC Blocking Voltage

200

400

600

800

RMS Reverse Voltage

Average Forward Current (TA=75°C)

Peak Forward Surge Current, tp=8.3ms

Operating and Storage Junction Temperature

Thermal Resistance

VR(RMS)

IFSM

TJ, Tstg

140

280

1.0

-65 to +175

420

560

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

VR=Rated VRRM

VR=Rated VRRM, TA=175°C (1N5059, 1N5060)

VR=Rated VRRM, TA=175°C (1N5061, 1N5062)

IF=1.0A

VR=4.0V, f=1.0MHz

MAX

5.0

300

200

1.2

UNITS

μA

R5 (28-February 2013)

1N5062BKTIN/LEAD Related Products

	1N5062BKTIN/LEAD	1N5062BKLEADFREE	1N5059BKLEADFREE	1N5060BKPBFREE	1N5060BKLEADFREE	0603X681M250ST-B	0805C270F251GT	0805G152G250GT-030-A
Description	Rectifier Diode, 1 Element, 1A, 800V V(RRM),	Rectifier Diode, 1 Element, 1A, 800V V(RRM),	Rectifier Diode, 1 Element, 1A, 200V V(RRM),	Rectifier Diode, 1 Element, 1A, 400V V(RRM),	Rectifier Diode, 1 Element, 1A, 400V V(RRM),	Ceramic Capacitor, Ceramic, 25V, 20% +Tol, 20% -Tol, X7R, -/+15ppm/Cel TC, 0.00068uF, 0603,	Ceramic Capacitor, Ceramic, 250V, NP0, -/+30ppm/Cel TC, 0.000027uF, 0805	Ceramic Capacitor, Multilayer, Ceramic, 25V, 2% +Tol, 2% -Tol, NP0, -/+30ppm/Cel TC, 0.0015uF, 0805,
Is it Rohs certified?	incompatible	conform to	conform to	conform to	conform to	incompatible	conform to	conform to
Reach Compliance Code	unknow	compli	compli	compli	compli	compliant	compliant	compliant
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	125 °C	125 °C	125 °C
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-	-
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	-	-
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	-	-	-
Maximum non-repetitive peak forward current	40 A	40 A	40 A	40 A	40 A	-	-	-
Number of components	1	1	1	1	1	-	-	-
Maximum output current	1 A	1 A	1 A	1 A	1 A	-	-	-
Maximum repetitive peak reverse voltage	800 V	800 V	200 V	400 V	400 V	-	-	-
surface mount	NO	NO	NO	NO	NO	-	-	-
Base Number Matches	1	1	1	1	1	-	-	-

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