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8413201RA

Description
16KX1 STANDARD SRAM, 85ns, CDIP20, CERAMIC, DIP-20
Categorystorage    storage   
File Size41KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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8413201RA Overview

16KX1 STANDARD SRAM, 85ns, CDIP20, CERAMIC, DIP-20

8413201RA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeDIP
package instructionCERAMIC, DIP-20
Contacts20
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time85 ns
I/O typeSEPARATE
JESD-30 codeR-GDIP-T20
JESD-609 codee0
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of functions1
Number of terminals20
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX1
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP20,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height5.08 mm
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb) - hot dipped
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
Base Number Matches1
HM-65262
March 1997
16K x 1 Asynchronous
CMOS Static RAM
Description
The HM-65262 is a CMOS 16384 x 1-bit Static Random
Access Memory manufactured using the Intersil Advanced
SAJI V process. The device utilizes asynchronous circuit
design for fast cycle times and ease of use. The HM-65262
is available in both JEDEC standard 20 pin, 0.300 inch wide
CERDIP and 20 pad CLCC packages, providing high board-
level packing density. Gated inputs lower standby current,
and also eliminate the need for pull-up or pull-down resis-
tors.
The HM-65262, a full CMOS RAM, utilizes an array of six
transistor (6T) memory cells for the most stable and lowest
possible standby supply current over the full military temper-
ature range. In addition to this, the high stability of the 6T
RAM cell provides excellent protection against soft errors
due to noise and alpha particles. This stability also improves
the radiation tolerance of the RAM over that of four transistor
(4T) devices.
Features
• Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max
• Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max
• Low Operating Current . . . . . . . . . . . . . . . . . 50mA Max
• Data Retention at 2.0V . . . . . . . . . . . . . . . . . . .20µA Max
• TTL Compatible Inputs and Outputs
• JEDEC Approved Pinout
• No Clocks or Strobes Required
• Temperature Range . . . . . . . . . . . . . . . +55
o
C to +125
o
C
• Equal Cycle and Access Time
• Single 5V Supply
• Gated Inputs-No Pull-Up or Pull-Down Resistors
Required
Ordering Information
PACKAGE
CERDIP
JAN #
SMD#
CLCC (SMD#)
NOTE:
1. Access Time/Data Retention Supply Current.
TEMP. RANGE
-40
o
C to +85
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
70ns/20µA
(NOTE 1)
85ns/20µA
(NOTE 1)
HM1-65262B-9
29109BRA
8413203RA
8413203YA
HM1-65262-9
29103BRA
8413201RA
8413201YA
(NOTE 1)
85ns/400µA
-
-
-
-
PKG. NO.
F20.3
F20.3
F20.3
J20.C
Pinouts
HM-65262 (CERDIP)
TOP VIEW
HM-65262 (CLCC)
TOP VIEW
V
CC
A13
A1
A0
A1
A2
A3
A4
A5
A6
Q
W
1
2
3
4
5
6
7
8
9
20 V
CC
19 A13
18 A12
17 A11
16 A10
15 A9
14 A8
13 A7
12 D
11 E
A2 3
A3 4
A4 5
A5 6
A6 7
Q 8
9 10 11 12
GND
W
E
D
2
A0
1 20 19
18 A12
17 A11
16 A10
15 A9
14 A8
13 A7
A0 - A13
E
Q
D
V
SS
/GND
V
CC
W
Address Input
Chip Enable/Power Down
Data Out
Data In
Ground
Power (+5)
Write Enable
GND 10
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
3002.2
6-1

8413201RA Related Products

8413201RA 29103BRA HM1-65262B-9 8413203RA 8413203YA
Description 16KX1 STANDARD SRAM, 85ns, CDIP20, CERAMIC, DIP-20 16KX1 STANDARD SRAM, 85ns, CDIP20 16KX1 STANDARD SRAM, 70ns, CDIP20 16KX1 STANDARD SRAM, 70ns, CDIP20, CERAMIC, DIP-20 STANDARD SRAM, 70ns, CQCC20, CERAMIC, QCC-20
Parts packaging code DIP DIP DIP DIP QLCC
package instruction CERAMIC, DIP-20 , CERAMIC, DIP-20 DIP, CERAMIC, QCC-20
Contacts 20 20 20 20 20
Reach Compliance Code not_compliant unknow not_compliant unknown not_compliant
ECCN code 3A001.A.2.C 3A001.A.2.C EAR99 3A001.A.2.C 3A001.A.2.C
Maximum access time 85 ns 85 ns 70 ns 70 ns 70 ns
JESD-30 code R-GDIP-T20 R-GDIP-T20 R-GDIP-T20 R-GDIP-T20 R-CQCC-N20
memory density 16384 bit 16384 bi 16384 bit 16384 bit 16384 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM OTHER SRAM
memory width 1 1 1 1 1
Number of functions 1 1 1 1 1
Number of terminals 20 20 20 20 20
word count 16384 words 16384 words 16384 words 16384 words 16384 words
character code 16000 16000 16000 16000 16000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 85 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -40 °C -55 °C -55 °C
organize 16KX1 16KX1 16KX1 16KX1 16KX1
Package body material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE CHIP CARRIER
Parallel/Serial PARALLEL SERIAL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY INDUSTRIAL MILITARY MILITARY
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE NO LEAD
Terminal location DUAL DUAL DUAL DUAL QUAD
Is it Rohs certified? incompatible - incompatible - incompatible
Maker Renesas Electronics Corporation - Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
I/O type SEPARATE - SEPARATE - SEPARATE
JESD-609 code e0 - e0 - e0
Output characteristics 3-STATE - 3-STATE - 3-STATE
encapsulated code DIP - DIP DIP QCCN
Encapsulate equivalent code DIP20,.3 - DIP20,.3 - LCC20,.3X.43
power supply 5 V - 5 V - 5 V
Filter level MIL-STD-883 - - MIL-STD-883 MIL-STD-883
Maximum seat height 5.08 mm - - 5.08 mm 3.05 mm
Maximum slew rate 0.05 mA - 0.116 mA - 0.05 mA
Terminal surface Tin/Lead (Sn/Pb) - hot dipped - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - hot dipped
Terminal pitch 2.54 mm - 2.54 mm 2.54 mm 1.27 mm
width 7.62 mm - - 7.62 mm 7.43 mm
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