PHOTODIODE
Si APD
S2381 to S2385, S5139, S8611, S3884, S4315 series
Low bias operation, for 800 nm band
Features
Applications
l
Stable operation at low bias
l
High-speed response
l
High sensitivity and low noise
s
General ratings / Absolute maximum ratings
Dimensional
outline/
Window
material *
1
➀/K
➁/L
➂/L
➀/K
➃/K
➄/K
➅/K
TO-5
TO-8
TO-18
l
Spatial light transmission
l
Rangefinder
Type No.
Package
Active area *
2
size
(mm)
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
Effective active
area
(mm
2
)
0.03
0.19
0.78
1.77
7.0
19.6
Absolute maximum ratings
Storage
Operating
temperature
temperature
Tstg
Topr
(°C)
(°C)
S2381
S2382
S5139
S8611
S2383
S2383-10 *
3
S3884
S2384
S2385
-20 to +85
-55 to +125
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Excess
Photo
Quantum Break do w n
Cut-off *
4
Dark
Spectral Peak *
4
Temp.
4
Terminal *
Gain
Noise
sensitivity efficiency voltage
coefficient current *
4
frequency
response sensitivity
capacitance figure *
4
V
BR
M
S
QE
I
D
range wavelength
of
fc
I
D
=100 µA
Ct
λ=800
nm
x
M=1
M=1
Type No.
V
BR
R
L
=50
Ω
λp
λ
λ=800
nm
λ=800
nm
λ=800
nm
Typ. Max.
(V) (V)
Typ. Max.
(nA) (nA)
0.05 0.5
(nm)
(nm)
(A/W)
(%)
(V/°C)
S2381
S2382
0.1
1
900
3
S5139
S8611
400 to 1000
800
0.5
75
150 200
0.65
0.3
S2383
0.2
2
600
6
3
S2383-10 *
S3884
0.5
5
400
10
S2384
1
10
120
40
3
30
40
95
S2385
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table
Note) The following different breakdown voltage ranges are available.
S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)
(MHz)
1000
(pF)
1.5
100
60
40
1
Si APD
S2381 to S2385, S5139, S8611, S3884, S4315 series
s
Quantum efficiency vs. wavelength
(Typ. Ta=25 ˚C,
λ=800
nm)
M=100
s
Spectral response
50
100
(Typ. Ta=25
˚C)
PHOTO SENSITIVITY (A/W)
30
M=50
20
QUANTUM EFFICIENCY (%)
40
80
60
40
10
20
0
200
400
600
800
1000
0
200
400
600
800
1000
WAVELENGTH (nm)
KAPDB0020EB
WAVELENGTH (nm)
KAPDB0021EA
s
Dark current vs. reverse voltage
10 nA
(Typ. Ta=25 ˚C)
s
Gain vs. reverse voltage
10000
20 ˚C
(Typ.
λ=800
nm)
S2384
1 nA
0 ˚C
1000
-20 ˚C
DARK CURRENT
S3884
S2383/-10
100 pA
GAIN
100
10 pA
S2381
S2382, S5139,
S8611
40 ˚C
10
60 ˚C
1 pA
0
50
100
150
200
1
80
100
120
140
160
180
REVERSE VOLTAGE
(V)
KAPDB0016EC
REVERSE VOLTAGE
(V)
KAPDB0017EC
s
Terminal capacitance vs. reverse voltage
1 nF
(Typ. Ta=25 ˚C, f=1 MHz)
s
Excess noise factor vs. gain
10
(Typ. Ta=25 ˚C, f=10 kHz, B=1 Hz)
M
0.5
TERMINAL CAPACITANCE
S2384
100 pF
S2385
EXCESS NOISE FACTOR
λ=650
nm
M
0.3
S3884
10 pF
S2383/-10
S2382
S5139, S8611
S2381
1 pF
M
0.2
λ=800
nm
1
0
50
100
150
200
1
10
100
REVERSE VOLTAGE
(V)
KAPDB0018EC
GAIN
KAPDB0022EA
2
Si APD
S2381 to S2385, S5139, S8611, S3884, S4315 series
➁
S5139
3.7 ± 0.2
1.5 LENS
4.65 ± 0.1
s
Dimensional outlines (unit: mm)
➀
S2381, S2382, S2383/-10
5.4 ± 0.2
WINDOW
2.0 MIN.
4.7 ± 0.1
0.4 MAX.
0.45
LEAD
13
0.45
LEAD
0.4 MAX.
PHOTOSENSITIVE
SURFACE
2.8
PHOTOSENSITIVE
SURFACE
2.8
2.54 ± 0.2
2.54 ± 0.2
1.2 MAX.
1.2 MAX.
CASE
CASE
KAPDA0010EA
13
3.75 ± 0.2
5.4 ± 0.2
0.65 ± 0.15
KAPDA0018EA
➂
S8611
5.4 ± 0.2
4.65 ± 0.1
➃
S3884
2.15 ± 0.3
4.7 ± 0.2
0.4 MAX.
2.8
(20)
WINDOW
3.0 MIN.
9.1 ± 0.2
8.2 ± 0.1
4.5 ± 0.2
2.8
PHOTOSENSITIVE
SURFACE
0.45
LEAD
0.45
LEAD
13
5.08 ± 0.2
2.54 ± 0.2
1.5 MAX.
1.2 MAX.
CASE
CASE
KAPDA0031EA
KAPDA0011EB
➄
S2384
9.1 ± 0.2
4.2 ± 0.2
➅
S2385
13.9 ± 0.2
0.45
LEAD
0.4 MAX.
(20)
7.5 ± 0.2
5.08 ± 0.2
INDEX MARK
1.4
1.0 MAX.
1.5 MAX.
CASE
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
CASE
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
KAPDA0013ED
KAPDA0012EA
(15)
PHOTOSENSITIVE
SURFACE
0.5 MAX. 3.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.8
4.9 ± 0.2
WINDOW
5.9 ± 0.1
8.1 ± 0.1
WINDOW
10.5 ± 0.1
12.35 ± 0.1
3
Si APD
S4315 series
TE-cooled type APD
S4315
series
Parameter
APD
5
Effective active area *
Spectral response range
Peak sensitivity wavelength
Symbol
-
-
λ
λp
Condition
S4315
S2381
φ0.2
S4315-01 S4315-02
S2382
S2383
φ0.5
φ1.0
400 to 1000
-
800
35
TO-8
S4315-04
S2384
φ3.0
800
-
Unit
-
mm
nm
nm
°C
-
M=60
M=100
Cooling temperature
∆T
Package
-
*5: Active area in which a typical gain can be obtained.
We welcome your request for active areas different from those listed above.
s
Cooling characteristic of TE-cooler
40
(Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W)
s
Current vs. voltage characteristic of TE-cooler
1.6
1.4
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
ELEMENT TEMPERATURE (˚C)
20
1.2
CURRENT (A)
0
1.0
0.8
0.6
0.4
-20
-40
0.2
-60
0
0.4
0.8
1.2
1.6
0
0
0.2
0.4
0.6
0.8
1.0
1.2
CURRENT (A)
KAPDB0098EA
VOLTAGE (V)
KAPDB0100EA
s
Thermistor temperature characteristic
10
6
s
Dimensional outline (unit: mm)
15.3 ± 0.2
14 ± 0.2
1.9 ± 0.2
(Typ.)
WINDOW
10 ± 0.2
RESISTANCE (Ω)
10
5
10
4
0.45
LEAD
10.2 ± 0.2
5.1 ± 0.2
12 MIN.
PHOTOSENSITIVE
SURFACE
6.4 ± 0.2
10
3
-40
-20
0
20
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
DETECTOR
(ANODE)
DETECTOR
(CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
KAPDA0020EB
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KAPD1007E09
May 2010 DN
RF/Wirelessly
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