IXGQ6N170AM datasheet, PDF - EEWORLD Datasheet

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IXGQ6N170AM: DescriptionInsulated Gate Bipolar Transistor, 6A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, TO-3PM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size516KB，2 Pages; ManufacturerIXYS; Environmental Compliance

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IXGQ6N170AM Overview

Insulated Gate Bipolar Transistor, 6A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, TO-3PM, 3 PIN

IXGQ6N170AM Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	TO-3PM
package instruction	PLASTIC, TO-3PM, 3 PIN
Contacts	2
Reach Compliance Code	compliant
Shell connection	ISOLATED
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	1700 V
Configuration	SINGLE
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	271 ns
Nominal on time (ton)	91 ns
Base Number Matches	1

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Advance Technical Data

High Voltage

IGBT

IXGQ 6N170AM

V

CES

I

C25

V

CE(sat)

t

fi(typ)

= 1700 V

=

6

A

= 7.0 V

=

32 ns

Symbol

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA

(RBSOA)

t

SC

P

C

T

J

T

JM

T

stg

M

d

V

ISOL

Test Conditions

T

J

= 25°C to 150°C

T

J

= 25°C to 150°C; R

GE

= 1 MΩ

Continuous

Transient

T

C

= 25°C

T

C

= 90°C

T

C

= 25°C, 1 ms

V

GE

= 15 V, T

VJ

= 125°C, R

G

= 33Ω

Clamped inductive load

T

J

= 125°C, V

CE

= 1200 V; V

GE

= 15 V, R

G

= 33Ω

T

C

= 25°C

Maximum Ratings

1700

±20

±30

6

3

14

I

CM

= 12

@ 0.8 V

CES

10

75

-55 ... +150

150

-55 ... +150

V

A

µs

W

°C

TO-3PM (IXGQ)

G

D

S

G = Gate,

E = Emitter,

C = Collector,

Mounting torque

50/60Hz, RMS, 10 s

1.13/10 Nm/lb.in.

2500

300

6

V

°C

g

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Weight

Features

Isolated Package

High current handling capability

MOS Gate turn-on

- drive simplicity

Rugged NPT structure

Molding epoxies meet UL 94 V-0

flammability classification

Applications

Capacitor discharge & pulser circuits

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

Advantages

High power density

Suitable for surface mounting

Easy to mount with 1 screw,

(isolated mounting screw hole)

Symbol

Test Conditions

Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

1700

3.0

Note 1

T

J

= 25°C

T

J

= 125°C

5.0

10

500

±100

T

J

= 25°C

T

J

= 125°C

5.5

6.5

7.0

V

µA

nA

V

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

I

C

I

C

= 250

µA,

V

GE

= 0 V

= 250

µA,

V

CE

= V

GE

V

CE

= 0.8 • V

CES

V

GE

= 0 V

V

CE

= 0 V, V

GE

=

±20

V

I

C

= I

C90

, V

GE

= 15 V

DS99057(06/03)

IXGQ6N170AM Related Products

	IXGQ6N170AM
Description	Insulated Gate Bipolar Transistor, 6A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, TO-3PM, 3 PIN
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	TO-3PM
package instruction	PLASTIC, TO-3PM, 3 PIN
Contacts	2
Reach Compliance Code	compliant
Shell connection	ISOLATED
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	1700 V
Configuration	SINGLE
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	271 ns
Nominal on time (ton)	91 ns
Base Number Matches	1

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