PD-95871
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number
IRHMS57264SE
Radiation Level
100K Rads (Si)
R
DS(on)
0.061Ω
IRHMS57264SE
JANSR2N7477T1
250V, N-CHANNEL
REF: MIL-PRF-19500/685
5
TECHNOLOGY
I
D
QPL Part Number
37A JANSR2N7477T1
Low-Ohmic
TO-254AA
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
37
23.5
148
208
1.67
±20
258
37
20.8
14
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
g
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1
11/01/04
IRHMS57264SE, JANSR2N7477T1
Pre-Irradiation
Min
250
—
—
2.5
27
—
—
—
—
—
—
—
—
—
—
—
—
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
—
0.29
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.061
4.5
—
10
25
100
-100
165
45
75
35
125
80
65
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 23.5A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 23.5A
Ã
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 37A
VDS = 125V
VDD = 125V, ID = 37A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
5410
770
36
1.2
—
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
37
148
1.2
560
8.2
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 37A, VGS = 0V
Ã
Tj = 25°C, IF = 37A, di/dt
≤100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS57264SE, JANSR2N777T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-state
Resistance (Low-Ohmic TO-254)
Diode Forward Voltage
Min
250
2.0
—
—
—
—
—
—
100K Rads (Si)
Max
—
4.5
100
-100
10
0.061
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 200V, V
GS
=0V
V
GS
= 12V, I
D
= 23.5A
V
GS
= 12V, I
D
= 23.5A
V
GS
= 0V, I
D
= 37A
0.061
1.2
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
MeV/(mg/cm
2
))
36.7
59.8
82.3
Energy
(MeV)
309
341
350
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
39.5
250
250
250
250
250
32.5
250
250
250
250
240
28.4
250
250
225
175
80
300
250
200
150
100
50
0
0
-5
-10
VGS
-15
-20
VDS
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS57264SE, JANSR2N7477T1
Pre-Irradiation
1000
VGS
TOP
15V
12V
10V
9.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000
VGS
15V
12V
10V
9.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
10
10
5.0V
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
1
5.5V
0.1
60µs PULSE WIDTH Tj = 25°C
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
RDS(on) , Drain-to-Source On Resistance
ID = 37A
2.5
ID, Drain-to-Source Current (A)
100
T J = 150°C
T J = 25°C
2.0
(Normalized)
10
1.5
1
1.0
0.1
VDS = 50V
15
60µs PULSE WIDTH
5
6
7
8
9
10
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.01
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHMS57264SE, JANSR2N777T1
10000
8000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHz
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = Cds + Cgd
20
ID = 37A
16
VDS = 200V
VDS = 125V
VDS = 50V
C, Capacitance (pF)
6000
Ciss
Coss
Crss
12
4000
8
2000
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
0
1
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
T J = 150°C
T J = 25°C
10
100µs
1ms
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10ms
0.1
1000
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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