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R2619ZC21J

Description
Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 2100V V(DRM), 2100V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size630KB,12 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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R2619ZC21J Overview

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 2100V V(DRM), 2100V V(RRM), 1 Element,

R2619ZC21J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance Codecompliant
Nominal circuit commutation break time50 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage3 V
Maximum holding current1000 mA
JESD-30 codeO-CXDB-X4
Maximum leakage current300 mA
On-state non-repetitive peak current37200 A
Number of components1
Number of terminals4
Maximum on-state current4395000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current5227 A
Off-state repetitive peak voltage2100 V
Repeated peak reverse voltage2100 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
Date:- 4 Mar, 2003
Data Sheet Issue:- 3
Distributed Gate Thyristor
Type R2619ZC18# to R2619ZC25#
(Old Type Number: R600CH18-21)
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1800-2500
1800-2500
1800-2100
1900-2200
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
It
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
2
2
MAXIMUM
LIMITS
2619
1792
1037
5227
4395
33.8
37.2
5.71×10
6.92×10
1000
1500
5
5
30
-40 to +125
-40 to +150
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
A/µs
A/µs
V
W
W
°C
°C
2
2
Maximum average on-state current, T
sink
=55°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
2
2
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
7)
Rated V
DRM
.
Data Sheet. Type R2619ZC18# to R2619ZC25# Issue 3
Page 1 of 12
March, 2003
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