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HIP2101IRZ-T

Description
2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
Categorysemiconductor    Analog mixed-signal IC   
File Size661KB,13 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

HIP2101IRZ-T Overview

2 A HALF BRDG BASED MOSFET DRIVER, PDSO8

HIP2101IRZ-T Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature125 Cel
Minimum operating temperature-40 Cel
Maximum supply voltage 114 V
Minimum supply voltage 19 V
Rated supply voltage 112 V
On time0.0560 us
Off time0.0560 us
Processing package descriptionLEAD FREE, PLASTIC, MS-012AA, SOIC-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelAUTOMOTIVE
high end driverYes
Interface TypeHALF BRDG BASED MOSFET DRIVER
Rated output peak current limit2 A
DATASHEET
HIP2101
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
The HIP2101 is a high frequency, 100V Half Bridge
N-Channel power MOSFET driver IC. It is equivalent to the
HIP2100 with the added advantage of full TTL/CMOS
compatible logic input pins. The low-side and high-side gate
drivers are independently controlled and matched to 13ns.
This gives users total control over dead-time for specific
power circuit topologies. Undervoltage protection on both
the low-side and high-side supplies force the outputs low. An
on-chip diode eliminates the discrete diode required with
other driver ICs. A new level-shifter topology yields the low-
power benefits of pulsed operation with the safety of DC
operation. Unlike some competitors, the high-side output
returns to its correct state after a momentary undervoltage of
the high-side supply.
FN9025
Rev 9.00
November 12, 2015
Features
• Drives N-Channel MOSFET Half Bridge
• SOIC, EPSOIC, QFN and DFN Package Options
• SOIC, EPSOIC and DFN Packages Compliant with 100V
Conductor Spacing Guidelines of IPC-2221
• Pb-free Product Available
(RoHS Compliant)
• Bootstrap Supply Max Voltage to 114VDC
• On-Chip 1 Bootstrap Diode
• Fast Propagation Times for Multi-MHz Circuits
• Drives 1000pF Load with Rise and Fall Times Typ. 10ns
• TTL/CMOS Input Thresholds Increase Flexibility
Ordering Information
PART NUMBER
HIP2101IB
(No
longer available,
recommended
replacement:
HIP2101IBZ)
HIP2101IBZ (Note 1)
HIP2101EIB
(No
longer available,
recommended
replacement:
HIP2101EIBZ)
HIP2101EIBZ
(Note 1)
HIP2101IRZ (Note 1)
HIP2101IR4Z
(Note 1)
NOTES:
1.
Intersil Pb-free products employ special Pb-free material sets;
molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020C.
2. Add “T” suffix for Tape and Reel packing option.
TEMP.
RANGE (°C)
-40 to 125
PACKAGE
8 Ld SOIC
PKG.
DWG. #
M8.15
• Independent Inputs for Non-Half Bridge Topologies
• No Start-Up Problems
• Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground, or HS Slewing at High dv/dt
• Low Power Consumption
• Wide Supply Range
-40 to 125
-40 to 125
8 Ld SOIC (Pb-free) M8.15
8 Ld EPSOIC
M8.15C
• Supply Undervoltage Protection
• 3 Output Driver Resistance
• QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
-40 to 125
-40 to 125
-40 to 125
8 Ld EPSOIC
(Pb-free)
16 Ld 5x5 QFN
(Pb-free)
12 Ld 4x4 DFN
(Pb-free)
M8.15C
L16.5x5
L12.4x4A
Applications
• Telecom Half Bridge Power Supplies
• Avionics DC-DC Converters
• Two-Switch Forward Converters
• Active Clamp Forward Converters
FN9025 Rev 9.00
November 12, 2015
Page 1 of 13
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