IRGBC30M-STRRPBF datasheet, PDF

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IRGBC30M-STRRPBF: DescriptionInsulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size184KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRGBC30M-STRRPBF Overview

Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN

IRGBC30M-STRRPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
Other features	SHORT CIRCUIT RATED
Shell connection	COLLECTOR
Maximum collector current (IC)	26 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	5.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	100 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	530 ns
Nominal on time (ton)	31 ns
VCEsat-Max	2.9 V
Base Number Matches	1

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IRGBC30M-STRRPBF Related Products

	IRGBC30M-STRRPBF	IRGBC30M-STRL	IRGBC30M-STRR	IRGBC30M-STRLPBF
Description	Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
Is it lead-free?	Lead free	Contains lead	Contains lead	Lead free
Is it Rohs certified?	conform to	incompatible	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
Other features	SHORT CIRCUIT RATED	SHORT CIRCUIT RATED	SHORT CIRCUIT RATED	SHORT CIRCUIT RATED
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	26 A	26 A	26 A	26 A
Collector-emitter maximum voltage	600 V	600 V	600 V	600 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Gate emitter threshold voltage maximum	5.5 V	5.5 V	5.5 V	5.5 V
Gate-emitter maximum voltage	20 V	20 V	20 V	20 V
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	100 W	100 W	100 W	100 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED	40
transistor applications	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal off time (toff)	530 ns	530 ns	530 ns	530 ns
Nominal on time (ton)	31 ns	31 ns	31 ns	31 ns
VCEsat-Max	2.9 V	2.9 V	2.9 V	2.9 V
Base Number Matches	1	1	1	1

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