Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| Other features | SHORT CIRCUIT RATED |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 26 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SINGLE |
| Gate emitter threshold voltage maximum | 5.5 V |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 100 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 530 ns |
| Nominal on time (ton) | 31 ns |
| VCEsat-Max | 2.9 V |
| Base Number Matches | 1 |
| IRGBC30M-STRL | IRGBC30M-STRRPBF | IRGBC30M-STRR | IRGBC30M-STRLPBF | |
|---|---|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN | Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN | Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN | Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN |
| Is it lead-free? | Contains lead | Lead free | Contains lead | Lead free |
| Is it Rohs certified? | incompatible | conform to | incompatible | conform to |
| Maker | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| Other features | SHORT CIRCUIT RATED | SHORT CIRCUIT RATED | SHORT CIRCUIT RATED | SHORT CIRCUIT RATED |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 26 A | 26 A | 26 A | 26 A |
| Collector-emitter maximum voltage | 600 V | 600 V | 600 V | 600 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Gate emitter threshold voltage maximum | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Gate-emitter maximum voltage | 20 V | 20 V | 20 V | 20 V |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 260 | NOT SPECIFIED | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 100 W | 100 W | 100 W | 100 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 40 | NOT SPECIFIED | 40 |
| transistor applications | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal off time (toff) | 530 ns | 530 ns | 530 ns | 530 ns |
| Nominal on time (ton) | 31 ns | 31 ns | 31 ns | 31 ns |
| VCEsat-Max | 2.9 V | 2.9 V | 2.9 V | 2.9 V |
| Base Number Matches | 1 | 1 | 1 | 1 |
京公网安备 11010802033920号
EEWORLD
