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IRGBC30M-STRLPBF

Description
Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size184KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRGBC30M-STRLPBF Overview

Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN

IRGBC30M-STRLPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
Other featuresSHORT CIRCUIT RATED
Shell connectionCOLLECTOR
Maximum collector current (IC)26 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)530 ns
Nominal on time (ton)31 ns
VCEsat-Max2.9 V
Base Number Matches1

IRGBC30M-STRLPBF Related Products

IRGBC30M-STRLPBF IRGBC30M-STRL IRGBC30M-STRRPBF IRGBC30M-STRR
Description Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
Is it lead-free? Lead free Contains lead Lead free Contains lead
Is it Rohs certified? conform to incompatible conform to incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
Other features SHORT CIRCUIT RATED SHORT CIRCUIT RATED SHORT CIRCUIT RATED SHORT CIRCUIT RATED
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 26 A 26 A 26 A 26 A
Collector-emitter maximum voltage 600 V 600 V 600 V 600 V
Configuration SINGLE SINGLE SINGLE SINGLE
Gate emitter threshold voltage maximum 5.5 V 5.5 V 5.5 V 5.5 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 100 W 100 W 100 W 100 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 NOT SPECIFIED 40 NOT SPECIFIED
transistor applications MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON SILICON SILICON
Nominal off time (toff) 530 ns 530 ns 530 ns 530 ns
Nominal on time (ton) 31 ns 31 ns 31 ns 31 ns
VCEsat-Max 2.9 V 2.9 V 2.9 V 2.9 V
Base Number Matches 1 1 1 1
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