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BX5325PM

Description
5 MHz - 125 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, H1
CategoryWireless rf/communication    Radio frequency and microwave   
File Size112KB,1 Pages
ManufacturerSpectrum Microwave
Download Datasheet Parametric Compare View All

BX5325PM Overview

5 MHz - 125 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, H1

BX5325PM Parametric

Parameter NameAttribute value
MakerSpectrum Microwave
Reach Compliance Codeunknown
Other featuresI/P POWER-MAX (PEAK)=27DBM
structureCOAXIAL
Gain19.5 dB
Maximum input power (CW)13 dBm
Maximum operating frequency125 MHz
Minimum operating frequency5 MHz
Maximum operating temperature85 °C
Minimum operating temperature-55 °C
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
Maximum voltage standing wave ratio2
Base Number Matches1
RF AMPLIFIER
MODEL
TM5325PM
Features
!
!
!
!
Superior Phase Noise Performance
Low Noise Figure: 2.0 dB Typical
High Output Power: +24 dBm Typical
Operating Temp. - 55 ºC
to +85
ºC
TYPICAL
Ta= 25 ºC
5-125 MHz
20.5
+24
-24
1.70:1
1.35:1
2.0
+12
85
MIN/MAX
Ta = -55 ºC to +85 ºC
5-125 MHz
20.5 + 1.0
+22.5 Min.
-23 Max.
2.2:1 Max.
2.0:1 Max.
3.0 Max.
+12
95 Max.
Available as:
TM5325PM, 4 Pin TO-8 (T4)
TN5325PM, 4 Pin Surface Mount (SM3)
FP5325PM, 4 Pin Flatpack (FP4)
BX5325PM, Connectorized Housing (H1)
Typical Intermodulation Performance at 25 º C
Second Order Harmonic Intercept Point ....... +58 dBm (Typ.)
Second Order Two Tone Intercept Point ........ +52 dBm (Typ.)
Third Order Two Tone Intercept Point ............ +40 dBm (Typ.)
Maximum Ratings
Ambient Operating Temperature .............. -55ºC to + 100 ºC
Storage Temperature ............................... -62ºC to + 125 ºC
Case Temperature ................................................. + 125 ºC
DC Voltage ......................................................... + 18 Volts
Continuous RF Input Power ................................. + 13 dBm
Short Term RF Input Power ...... 50 Milliwatts (1 Minute Max.)
Maximum Peak Power .................... 0.5 Watt (3
µsec
Max.)
Specifications
CHARACTERISTIC
Frequency
Gain (dB)
Power @ 1 dB
Comp. (dBm)
Reverse
Isolation (dB)
In
Out
Noise figure (dB)
Power
Vdc
mA
VSWR
Guaranteed Phase Noise Performance
(dBc/Hz)
Frequency
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
Typical
-170
-175
-175
-176
-175
Guarantee (Min.)
-166
-171
-171
-172
-171
Note: Care should always be taken to effectively ground the case of each unit.
Typical Performance Data
Legend
+ 25 ºC
+ 85 ºC - - - - - - -55 ºC
2707 Black Lake Place, Philadelphia, PA 19154
TEL 215-464-4000
· · · ·
FAX 215-464-4001
12/18/03

BX5325PM Related Products

BX5325PM TN5325PM TM5325PM FP5325PM
Description 5 MHz - 125 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, H1 5 MHz - 125 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, SM3, 4 PIN 5 MHz - 125 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, T4, TO-8, 4 PIN 5 MHz - 125 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, FP-4
Reach Compliance Code unknown unknown unknown unknown
Other features I/P POWER-MAX (PEAK)=27DBM I/P POWER-MAX (PEAK)=27DBM I/P POWER-MAX (PEAK)=27DBM I/P POWER-MAX (PEAK)=27DBM
structure COAXIAL COMPONENT COMPONENT COMPONENT
Gain 19.5 dB 19.5 dB 19.5 dB 19.5 dB
Maximum input power (CW) 13 dBm 13 dBm 13 dBm 13 dBm
Maximum operating frequency 125 MHz 125 MHz 125 MHz 125 MHz
Minimum operating frequency 5 MHz 5 MHz 5 MHz 5 MHz
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
RF/Microwave Device Types WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
Maximum voltage standing wave ratio 2 2 2 2
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