IRFR4219A datasheet, PDF - EEWORLD Datasheet

IRFR4219A: DescriptionPower Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size121KB，2 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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IRFR4219A Overview

Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Parameter Name	Attribute value
Maker	Harris
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	450 V
Maximum drain current (ID)	2.5 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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