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IXTH12N45MA

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size681KB,8 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

IXTH12N45MA Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IXTH12N45MA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIXYS
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
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