IRLR110TR datasheet, PDF - EEWORLD Datasheet

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IRLR110TR: DescriptionPower Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,; CategoryDiscrete semiconductor The transistor; File Size175KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

IRLR110TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	4.3 A
Maximum drain-source on-resistance	0.54 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum pulsed drain current (IDM)	19 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRLR110TR Related Products

	IRLR110TR	IRLR110TRL
Description	Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,	Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Is it Rohs certified?	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	4.3 A	4.3 A
Maximum drain-source on-resistance	0.54 Ω	0.54 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	25 W	25 W
Maximum pulsed drain current (IDM)	19 A	17 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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