PD - 94351
IRFP17N50LS
SMPS MOSFET
Applications
l
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HEXFET
®
Power MOSFET
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
ZVS and High Frequency Circuit
PWM Inverters
V
DSS
500V
R
DS(on)
typ.
0.28Ω
T
rr
170ns
I
D
16A
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low Trr and Soft Diode Recovery
High Performance Optimised Anti-parallel Diode
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
SMD-247
Absolute Maximum Ratings
Max.
16
11
64
220
1.8
± 30
13
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
lbft.in(N.m)
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
16
MOSFET symbol
––– –––
showing the
A
G
64
integral reverse
––– –––
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
––– 170 250
T
J
= 25°C
I
F
= 16A
ns
––– 220 330
T
J
= 125°C
di/dt = 100A/µs
––– 470 710
T
J
= 25°C
nC
––– 810 1210
T
J
= 125°C
––– 7.3
11
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Typical SMPS Topologies
l
Bridge Converters
l
All Zero Voltage Switching
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1
11/28/01
IRFP17N50LS
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
Conditions
500 ––– –––
V
V
GS
= 0V, I
D
= 250µA
–––
0.6 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.28 0.32
Ω
V
GS
= 10V, I
D
= 9.9A
3.0
––– 5.0
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 50
µA V
DS
= 500V, V
GS
= 0V
––– ––– 2.0
mA V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
––– ––– 100
V
GS
= 30V
nA
––– ––– -100
V
GS
= -30V
Min.
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
21
51
50
28
2760
325
37
3690
84
159
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 9.9A
130
I
D
= 16A
33
nC
V
DS
= 400V
59
V
GS
= 10V
–––
V
DD
= 250V
–––
I
D
= 16A
ns
–––
R
G
= 7.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 400V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
390
16
22
Units
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Notes:
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.56
–––
40
Units
°C/W
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300µs; duty cycle
≤
2%.
Starting T
J
= 25°C, L = 3.0mH, R
G
= 25Ω,
I
AS
= 16A.
I
SD
≤
16A, di/dt
≤
347A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
2
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IRFP17N50LS
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
ID , Drain-to-Source Current (A)
10
ID , Drain-to-Source Current (A)
10
1
5.0V
5.0V
0.1
1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
0.1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
I
D
= 16A
2.5
10
2.0
T
J
= 25
°
C
1.5
1
1.0
0.5
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
8.0
9.0
5.0
6.0
7.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40 60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRFP17N50LS
100000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
16A
V
GS
, Gate-to-Source Voltage (V)
16
10000
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
C, Capacitance(pF)
Ciss
1000
12
8
Coss
100
4
Crss
10
1
10
100
1000
0
0
30
60
90
120
150
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
10us
10
T
J
= 25
°
C
1
100us
1ms
1
10ms
0.1
0.2
V
GS
= 0 V
0.6
0.9
1.3
1.6
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
1000
10000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFP17N50LS
20
V
DS
V
GS
R
D
16
D.U.T.
+
I
D
, Drain Current (A)
R
G
-
V
DD
12
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
8
Fig 10a.
Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.001
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T = P
DM
x Z
thJC
+ T
C
J
0.1
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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