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AM29PDS322DB10WMIB

Description
Flash, 2MX16, 100ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, FBGA-48
Categorystorage    storage   
File Size830KB,50 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Download Datasheet Parametric View All

AM29PDS322DB10WMIB Overview

Flash, 2MX16, 100ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, FBGA-48

AM29PDS322DB10WMIB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSPANSION
Parts packaging codeBGA
package instruction6 X 12 MM, 0.80 MM PITCH, FBGA-48
Contacts48
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time100 ns
Other featuresBOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B48
JESD-609 codee0
length12 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of functions1
Number of departments/size8,63
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply1.8/2.2 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size4K,32K
Maximum standby current0.000005 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width6 mm
Base Number Matches1
ADVANCE INFORMATION
Am29PDS322D
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V)
Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
s
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank.
— Zero latency between read and write operations
s
Page Mode Operation
— 4 word page allows fast asynchronous reads
s
Dual Bank architecture
— One 4 Mbit bank and one 28 Mbit bank
s
SecSi (Secured Silicon) Sector: Extra 64 KByte
sector
Factory locked and identifiable:
16 byte Electronic
Serial Number available for factory secure, random
ID; verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
Customer lockable:
Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
s
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
s
Package options
— 48-ball FBGA
s
Top or bottom boot block
s
Manufactured on 0.23 µm process technology
s
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
s
High performance
— Access time as fast 40 ns (100 ns random access
time) at 1.8 V to 2.2 V V
CC
— Random access time of 100 ns at 1.8 V to 2.2 V V
CC
will be required as customers migrate downward in
voltage
s
Ultra low power consumption (typical values)
— 2.5 mA active read current at 1 MHz for initial page
read
— 24 mA active read current at 10 MHz for initial page
read
— 0.5 mA active read current at 10 MHz for intra-page
read
— 1 mA active read current at 20 MHz for intra-page
read
— 200 nA in standby or automatic sleep mode
s
Minimum 1 million write cycles guaranteed per
sector
s
20 year data retention at 125
°
C
— Reliable operation for the life of the system
SOFTWARE FEATURES
s
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
s
Supports Common Flash Memory Interface (CFI)
s
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
s
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
s
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
s
Any combination of sectors can be erased
s
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
s
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
s
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function accelerates program
timing
— ACC voltage is 8.5 V to 12.5 V
s
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication#
23569
Rev:
A
Amendment/0
Issue Date:
December 4, 2000
Refer to AMD’s Website (www.amd.com) for the latest information.
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