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1N5451ACHIP

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt, DIE
CategoryDiscrete semiconductor    diode   
File Size61KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N5451ACHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt, DIE

1N5451ACHIP Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionX-XUUC-N
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresGOOD Q
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2.6
Nominal diode capacitance39 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.02 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT
Base Number Matches1
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