OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
OneNAND
TM
Specification
Density
512Mb
Part No.
KFG1216Q2A
KFG1216D2A
KFG1216U2A
V
CC
(core & IO)
1.8V(1.7V~1.95V)
2.65V(2.4V~2.9V)
3.3V(2.7V~3.6V)
Temperature
Extended
Extended
Industrial
PKG
63FBGA(LF)/63FBGA
63FBGA(LF)/63FBGA
63FBGA(LF)/63FBGA
Version: Ver. 1.0
Date: May 17th, 2005
1
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
1.0
INTRODUCTION
This specification contains information about the Samsung Electronics Company OneNAND
™
‚ Flash memory product family. Section
1.0 includes a general overview, revision history, and product ordering information.
Section 2.0 describes the OneNAND device. Section 3.0 provides information about device operation. Electrical specifications and
timing waveforms are in Sections 4.0 though 6.0. Section 7.0 provides additional application and technical notes pertaining to use of
the OneNAND. Package dimensions are found in Section 8.0
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
OneNAND
™
‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as the property of their
rightful owners.
Copyright
©
2005, Samsung Electronics Company, Ltd
2
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
1.1
OneNAND
Revision History
Document Title
Revision History
Revision No. History
0.0
0.1
Initial issue.
1. Corrected Errata
2. Revised cache read flow chart
3. Revised standby current
4. Revised spare area description
5. Added CE don’t care state for Asynch Write, Load, Program, and Block
Erase timing diagram
1. Added Copy Back Operation with Random Data Input
2. Changed tBA from 11ns to 11.5ns
3. Pended Active Erase Current
Draft Date
Nov. 4, 2004
Dec. 7, 2004
Remark
Preliminary
Preliminary
0.2
Dec. 24, 2004
Preliminary
0.3
1. Corrected the errata
Jan. 13, 2005
2. Revised typical value of ISB from 50uA to 10uA
3. Revised maximum value of ISB from 100uA to 50uA
4. Revised maximum value of tCE, tAA and tACC from 70ns to 76ns
5. Revised Vcc-IO description
6. Revised Spare Area description
7. Added extra information on Controller Status Register
8. Added commands related to Interrupt Status Register bits
9. Revised Write Protection Status on Chapter 3.4.3
10. Revised Copy-Back Program Operation description
11. Added extra information on Multi-Block Erase Operation
12. Disabled FBA restriction in OTP operation
13. Revised Cache Read Flow Chart
14. Revised Reset Parameter descriptions
15. Added RDY information on Warm Reset Timing diagram
16. Added information on Data Protection Timing During Power Down
17. Revised Interrupt pin rise and falling slope graph
18. Added restriction on address register setting on Dual Operations
19. Added restriction on address register setting on Cache Read Operation
1. Corrected the errata
2. Updated DC parameters to RMS values
3. Added Speed Information on Product Number
4. Revised tOEZ description
5. Revised OTP register setting restriction
6. Added Boot Sequence Infrormation on Technical Notes
7. Added Cint Information
Feb. 25, 2005
Preliminary
0.4
Preliminary
3
OneNAND512(KFG1216x2A-xxB5)
Revision History
Revision No. History
1.0
1. Corrected the errata
2. Added Data Protection flow chart.
3. Removed Cache Read Operation.
4. Added additional information on command register.
5. Revised Interrupt status register information.
6. Added INT pin schematic.
7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us.
8. Revised AC/DC parameters
9. Revised ECC Bypass Description.
10. Revised Reset Parameters and Timing Diagrams.
FLASH MEMORY
Draft Date
May. 17, 2005
Remark
Final
4
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
1.2
Flash Product Type Selector
Samsung offers a variety of Flash solutions including NAND Flash, OneNAND
™
and NOR Flash. Samsung offers Flash products
both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia.
To determine which Samsung Flash product solution is best for your application, refer the product selector chart.
Application Requires
Fast Random Read
Fast Sequential Read
Fast Write/Program
Multi Block Erase
Erase Suspend/Resume
Copyback
Lock/Unlock/Lock-Tight
ECC
Scalability
Samsung Flash Products
NAND
•
•
OneNAND
•
•
•
(Max 64 Blocks)
•
•
(EDC)
External (Hardware/Software)
•
•
(ECC)
•
Internal
•
•
X
•
•
NOR
•
1.3
Ordering Information
K F G 12 1 6 Q 2 A - x x B 5
Speed
5 : 54MHz
6 : 66MHz
Product Line desinator
B : Include Bad Block
D : Daisy Sample
Operating Temperature Range
E = Extended Temp. (-30
°C
to 85
°C)
I = Industrial Temp. (-40
°C
to 85
°C)
Package
D : FBGA(Lead Free)
F : FBGA(Leaded)
Version
2nd Generation
Page Architecture
2 : 2KB Page
Samsung
OneNAND Memory
Device Type
G : Single Chip
Density
12: 512Mb
Organization
x16 Organization
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
D : 2.65V(2.4V to 2.9V)
U : 3.3V(2.7 V to 3.6V)
5
京公网安备 11010802033920号
EEWORLD
