HX6364/1RSHZT datasheet, PDF - EEWORLD Datasheet

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HX6364/1RSHZT: DescriptionStandard SRAM, 8KX8, 45ns, CMOS, CDIP28, CERAMIC, DIP-28; Categorystorage storage; File Size103KB，2 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HX6364/1RSHZT Overview

Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, CERAMIC, DIP-28

HX6364/1RSHZT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Honeywell
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	45 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T28
JESD-609 code	e0
length	35.56 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class S (Modified)
Maximum seat height	4.445 mm
Minimum standby current	2.5 V
Maximum slew rate	0.008 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
total dose	1M Rad(Si) V
width	15.24 mm
Base Number Matches	1

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HX6364/1RSHZT Related Products

	HX6364/1RSHZT	HX6364/1RCHC	HX6364/1XSHZC	HX6364/1XCHC	HX6364/1RCHT	HX6364/1XCHT	HX6364/1RSHZC	HX6364/1XSHZT
Description	Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, CERAMIC, DIP-28	Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, CERAMIC, DIP-28	Standard SRAM, 8KX8, 45ns, CMOS, CDFP36, CERAMIC, FP-36	Standard SRAM, 8KX8, 45ns, CMOS, CDFP36, CERAMIC, FP-36	Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, CERAMIC, DIP-28	Standard SRAM, 8KX8, 45ns, CMOS, CDFP36, CERAMIC, FP-36	Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, CERAMIC, DIP-28	Standard SRAM, 8KX8, 45ns, CMOS, CDFP36, CERAMIC, FP-36
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	DIP	DFP	DFP	DIP	DFP	DIP	DFP
package instruction	DIP, DIP28,.6	DIP, DIP28,.6	DFP, FL36,.6,25	DFP, FL36,.6,25	DIP, DIP28,.6	DFP, FL36,.6,25	DIP, DIP28,.6	DFP, FL36,.6,25
Contacts	28	28	36	36	28	36	28	36
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	45 ns	45 ns	45 ns	45 ns	45 ns	45 ns	45 ns	45 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-CDIP-T28	R-CDIP-T28	S-CDFP-F36	S-CDFP-F36	R-CDIP-T28	S-CDFP-F36	R-CDIP-T28	S-CDFP-F36
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
length	35.56 mm	35.56 mm	16.002 mm	16.002 mm	35.56 mm	16.002 mm	35.56 mm	16.002 mm
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	28	28	36	36	28	36	28	36
word count	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES	YES	YES
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	DFP	DFP	DIP	DFP	DIP	DFP
Encapsulate equivalent code	DIP28,.6	DIP28,.6	FL36,.6,25	FL36,.6,25	DIP28,.6	FL36,.6,25	DIP28,.6	FL36,.6,25
Package shape	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE	RECTANGULAR	SQUARE	RECTANGULAR	SQUARE
Package form	IN-LINE	IN-LINE	FLATPACK	FLATPACK	IN-LINE	FLATPACK	IN-LINE	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.445 mm	4.445 mm	3.5052 mm	3.5052 mm	4.445 mm	3.5052 mm	4.445 mm	3.5052 mm
Minimum standby current	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Maximum slew rate	0.008 mA	0.008 mA	0.008 mA	0.008 mA	0.008 mA	0.008 mA	0.008 mA	0.008 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	YES	NO	YES	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	FLAT	FLAT	THROUGH-HOLE	FLAT	THROUGH-HOLE	FLAT
Terminal pitch	2.54 mm	2.54 mm	0.635 mm	0.635 mm	2.54 mm	0.635 mm	2.54 mm	0.635 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
total dose	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V
width	15.24 mm	15.24 mm	16.002 mm	16.002 mm	15.24 mm	16.002 mm	15.24 mm	16.002 mm
Maker	Honeywell	Honeywell	-	Honeywell	Honeywell	Honeywell	-	Honeywell
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
power supply	5 V	5 V	-	5 V	5 V	5 V	-	5 V
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Base Number Matches	1	1	-	1	1	1	-	1

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