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MA3XD17

Description
Silicon epitaxial planar type
File Size44KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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MA3XD17 Overview

Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3XD17
Silicon epitaxial planar type
Unit : mm
For rectification
For protection against reverse current
I
Features
Mini type 3-pin package
High breakdown voltage V
R
= 100 V
2.8
0.3
0.65
±
0.15
+
0.2
1.5
0.05
+
0.25
0.65
±
0.15
0.95
2.9
0.05
1.9
±
0.2
1
3
2
+
0.2
0.95
1.45
+
0.2
0.1
Parameter
Reverse voltage (DC)
Peak reverse voltage
Non-repetitive peak forward
surge current
*
Average forward current
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
FSM
I
F(AV)
T
j
T
stg
Rating
100
100
1.5
300
125
−55
to
+150
Unit
V
V
A
mA
°C
°C
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M5K
Internal Connection
1
3
2
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
= 100 V
I
F
= 300 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 0.1 · I
R
, R
L
= 100
0.50
100
7
Conditions
Min
Typ
Max
200
0.58
Unit
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
1. Rated input/output frequency: 250 MHz
3. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0 to 0.1
0.1 to 0.3
0.4
±
0.2
1.1
0.8
0.16
0.06
I
Absolute Maximum Ratings
T
a
=
25°C
+
0.1
0.4
0.05
+
0.1
1

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