PIN Diodes
MA3Z551
Silicon epitaxial planar type
Unit : mm
For high-frequency variable resistor attenuator
2.1
±
0.1
0.425
1.25
±
0.1
0.425
•
Small diode capacitance C
D
•
Large variable range of forward dynamic resistance r
f
•
Mini type package, allowing downsizing of equipment and auto-
matic insertion through the taping package and magazine package
0.65
2.0
±
0.2
1.3
±
0.1
1
0.65
3
2
0.2
0.9
±
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
V
RM
I
F
P
D
T
opr
T
stg
Rating
40
45
100
150
−25
to
+85
−55
to
+150
Unit
V
V
mA
mW
°C
°C
0.7
±
0.1
0 to 0.1
0.2
±
0.1
1 : Anode
2 : NC
3 : Cathode
EIAJ SC-70
：
S-Mini Type Package (3-pin)
Marking Symbol: MY
Internal Connection
1
3
2
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance
*
Symbol
I
R
V
F
C
D
r
f1
r
f2
Note) 1．
Rated input/output frequency: 100 MHz
2． : r
f
measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
*
V
R
= 40 V
I
F
= 100 mA
V
R
= 15 V, f = 1 MHz
I
F
= 10
µA,
f = 100 MHz
I
F
= 10 mA, f = 100 MHz
1
1.05
0.3
2
6
10
Conditions
Min
Typ
Max
100
1.2
0.5
Unit
nA
V
pF
kΩ
Ω
0.15
−
0.05
+
0.1
0.3
−
0
+
0.1
I
Features
1
Embedded System
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