5962F9671602MEX datasheet, PDF

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5962F9671602MEX: DescriptionACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CDIP16, CERAMIC, DIP-16; Categorylogic logic; File Size206KB，26 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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5962F9671602MEX Overview

ACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CDIP16, CERAMIC, DIP-16

5962F9671602MEX Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	DIP,
Contacts	16
Reach Compliance Code	compliant
Counting direction	UP
series	ACT
JESD-30 code	R-CDIP-T16
Load/preset input	YES
Logic integrated circuit type	BINARY COUNTER
Operating mode	SYNCHRONOUS
Number of digits	4
Number of functions	1
Number of terminals	16
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
propagation delay (tpd)	23 ns
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
total dose	300k Rad(Si) V
Trigger type	POSITIVE EDGE
width	7.62 mm
minfmax	50 MHz
Base Number Matches	1

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REVISIONS

LTR

DESCRIPTION

Changes in accordance with NOR 5962-R329-97.

Changes in accordance with NOR 5962-R008-99.

Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial

changes throughout. – tmh

Correct title to accurately describe device function. Update boilerplate to

MIL-PRF-38535 and radiation hardness assurance boilerplate paragraphs. -

LTG

DATE (YR-MO-DA)

97-10-22

98-10-22

00-07-03

APPROVED

Monica L. Poelking

Raymond L. Monnin

Monica L. Poelking

07-09-17

Thomas M. Hess

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

Thanh V. Nguyen

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

CHECKED BY

Thanh V. Nguyen

APPROVED BY

Monica L. Poelking

DRAWING APPROVAL DATE

95-12-21

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

http://www.dscc.dla.mil

MICROCIRCUIT, DIGITAL, ADVANCED CMOS,

RADIATION HARDENED, 4-BIT BINARY

SYNCHRONOUS COUNTER, TTL COMPATIBLE

INPUTS, MONOLITHIC SILICON

SIZE

SHEET

CAGE CODE

AMSC N/A

REVISION LEVEL

DSCC FORM 2233

APR 97

67268

1 OF

5962-96716

5962-E642-07

1.3 Absolute maximum ratings. 1/ 2/ 3/

Supply voltage range (V

) .................................................................................. -0.5 V dc to +7.0 V dc

DC input voltage range (V

) ................................................................................ -0.5 V dc to V

+ 0.5 V dc

DC output voltage range (V

OUT

) ........................................................................... -0.5 V dc to V

+ 0.5 V dc

DC input current, any one input (I

).....................................................................

±10

DC output current, any one output (I

OUT

)..............................................................

±50

Storage temperature range (T

STG

) ....................................................................... -65°C to +150°C

Lead temperature (soldering, 10 seconds)........................................................... +265°C

Thermal resistance, junction-to-case (θ

Case outline E.................................................................................................... 24°C/W

Case outline X.................................................................................................... 29°C/W

Thermal resistance, junction-to-ambient (θ

Case outline E.................................................................................................... 73°C/W

Case outline X.................................................................................................... 114°C/W

Junction temperature (T

) .................................................................................... +175°C

Maximum package power dissipation at T

= +125°C (P

): 4/

Case outline E.................................................................................................... 0.68 W

Case outline X.................................................................................................... 0.44 W

1.4 Recommended operating conditions. 2/ 3/

Supply voltage range (V

) .................................................................................. +4.5 V dc to +5.5 V dc

Input voltage range (V

) ...................................................................................... +0.0 V dc to V

Output voltage range (V

OUT

)................................................................................. +0.0 V dc to V

Maximum low level input voltage (V

).................................................................. 0.8 V

Minimum high level input voltage (V

) ................................................................. V

Case operating temperature range (T

) ............................................................... -55°C to +125°C

Maximum input rise or fall time at V

= 4.5 V (t

, t

) ............................................ 10 ns/V

1.5 Radiation features.

Total dose ........................................................................................................... > 3 x 10

Rads (Si)

Single event phenomenon (SEP) effective

linear energy threshold (LET) no upsets (see 4.4.4.4)....................................... > 100 MeV/(cm

/mg) 5/

Dose rate upset (20 ns pulse) ............................................................................. > 1 x 10

Rads (Si)/s 5/

Dose rate latch-up ............................................................................................... None 5/

Dose rate survivability ......................................................................................... > 1 x 10

Rads (Si)/s 5/

Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

Unless otherwise specified, all voltages are referenced to GND.

The limits for the parameters specified herein shall apply over the full specified V

range and case temperature range of

-55°C to +125°C unless otherwise noted.

If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is

based on

) at the following rate:

Case E .......................................................................................................................... 13.7 mW/°C

Case X .......................................................................................................................... 8.8 mW/°C

Limits are guaranteed by design or process, but not production tested unless specified by the customer through the

purchase order or contract.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96716

SHEET

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 -

MIL-STD-1835 -

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from

the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract.

AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)

ASTM F1192- Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation

of Semiconductor Devices.

(Copies of this document is available online at http://www.astm.org/ or from ASTM International, P. O. Box C700,

100 Barr Harbor Drive, West Conshohocken, PA 19428-2959).

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Truth table. The truth table shall be as specified on figure 2.

3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.

3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4.

3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96716

SHEET

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full

case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table IA.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be

in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103

(see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and

herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for

device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product

(see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the

option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 40 (see MIL-PRF-38535, appendix A).

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96716

SHEET

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