BUK71/794R1-40BT
TrenchMOS™ standard level FET
Rev. 01 — 4 November 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices
include TrenchPLUS diodes for over-temperature protection.
Product availability:
BUK714R1-40BT in SOT426 (D
2
-PAK)
BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
s
Integrated temperature sensor
s
Very low on-state resistance
s
Q101 compliant
s
175
°C
rated.
1.3 Applications
s
Electrical Power Assisted Steering
s
Motors, lamps and solenoids
s
12 V loads
s
General purpose power switching.
1.4 Quick reference data
s
s
R
DSon
= 3.4 mΩ (typ)
V
DS
≤
40 V
s
I
D
≤
75 A
s
P
tot
≤
272 W.
2. Pinning information
Table 1:
Pin
1
2
3
4
5
mb
Pinning - SOT426 and SOT263B, simplified outline and symbol
Simplified outline
mb
mb
Description
gate (g)
anode (a)
drain (d)
cathode (k)
source (s)
mounting base;
connected to drain (d)
Symbol
d
a
g
1 2 3 4 5
03nm72
s
k
Front view
MBK127
1
5
SOT426 (D
2
-PAK)
MBL263
SOT263B (TO-220AB)
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
3. Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 75 A;
V
DS
≤
40 V; V
GS
= 10 V; R
GS
= 50
Ω;
starting T
mb
= 25
°C
Human Body Model; C = 100 pF;
R = 1.5 kΩ
[1]
[2]
[1]
[2]
[2]
Conditions
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
-
−55
−55
-
-
-
-
Max
40
40
±20
187
75
75
748
272
+175
+175
187
75
748
1.5
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
Source-drain diode
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source avalanche
energy
Electrostatic discharge
V
esd
Electrostatic discharge voltage; pins
1,3,5
-
4
kV
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
9397 750 13954
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 4 November 2004
2 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
120
Pder
(%)
03na19
200
ID
(A)
150
03nm69
80
100
40
50
Capped at 75 A due to package
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
V
GS
≥
10 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
03nm68
limit RDSon = VDS/ ID
tp = 10 µs
102
100 µs
1 ms
Capped at 75 A due to package
D.C.
10 ms
10
100 ms
1
10-1
1
10
VDS (V)
102
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13954
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 4 November 2004
3 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3:
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
Figure 4
Min Typ Max Unit
-
-
0.55 K/W
thermal resistance from junction to
mounting base
thermal resistance from junction to ambient
SOT263B (TO-220AB)
SOT426 (D
2
-PAK)
vertical in still air
minimum footprint; mounted on a PCB
-
-
-
-
60
50
K/W
K/W
Symbol Parameter
4.1 Transient thermal impedance
1
Z
th(j-mb)
(K/W)
03ni64
δ
= 0.5
10-1
0.2
0.1
0.05
0.02
10-2
P
δ
=
tp
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13954
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 4 November 2004
4 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
5. Characteristics
Table 4:
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
V
(BR)DSS
Parameter
drain-source breakdown
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 40 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 50 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 175
°C
V
F
S
F
temperature sense diode
forward voltage
temperature sense diode
temperature coefficient
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of
die SOT263B
from upper edge of drain
mounting base to center of
die SOT426
9397 750 13954
Min
Typ
Max
Unit
Static characteristics
40
36
-
-
-
-
V
V
2
1
-
-
-
-
3
-
-
0.02
-
2
4
-
4.4
1
500
100
V
V
V
µA
µA
nA
-
-
1.58
−2.55
3.4
-
1.60
−2.83
4.1
7.8
1.63
−3.11
mΩ
mΩ
V
mV/K
I
F
= 1 mA
I
F
= 1 mA;
−55 °C
< T
j
< 175
°C
V
GS
= 10 V; V
DD
= 32 V;
I
D
= 25 A;
Figure 14
Dynamic characteristics
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
d
-
-
-
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
-
-
-
V
DD
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω
-
-
-
-
-
-
83
18
29
5106
1389
527
38
82
141
90
4.5
3.5
-
-
-
6808
1667
721
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
-
2.5
-
nH
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 4 November 2004
5 of 15
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