CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
TABLE 1. HM-6518/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
LIMITS
PARAMETER
Output Low Voltage
SYMBOL
VOL
(NOTE 1)
CONDITIONS
VCC = 4.5V,
IOL = 3.2mA
VCC = 4.5V,
IOH = -0.4mA
VCC = 5.5V,
VI = GND or VCC
VCC = 5.5V,
VO = GND or VCC
VCC = 2.0V,
E = VCC,
IO = 0mA,
VI = VCC or GND
VCC = 5.5V,
(Note 2),
E = 1MHz,
IO = 0mA,
VI = VCC or GND
VCC = 5.5V,
IO = 0mA,
VI = VCC or GND
GROUP A
SUBGROUPS
1, 2, 3
TEMPERATURE
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-
-
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
5
10
4
µA
µA
mA
MIN
-
MAX
0.4
UNITS
V
Output High Voltage
VOH
1, 2, 3
2.4
-
V
µA
µA
Input Leakage Current
II
1, 2, 3
-1.0
+1.0
Output Leakage Current
IOZ
1, 2, 3
-1.0
+1.0
Data Retention Supply Current
HM-6518B/883
HM-6518/883
Operating Supply Current
ICCDR
1, 2, 3
ICCOP
Standby Supply Current
ICCSB
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
µA
NOTES:
1. All voltages referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
6-87
HM-6518/883
TABLE 2. HM-6518/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
LIMITS
(NOTES 1, 2)
CONDITIONS
VCC = 4.5 and
5.5V
VCC = 4.5 and
5.5V, Note 3
VCC = 4.5 and
5.5V
PARAMETER
Chip Enable
Access Time
Address Access
Time
Chip Select
Output Enable
Time
Write Enable
Output Disable
Time
Chip Select
Output Disable
Time
Chip Enable Pulse
Negative Width
Chip Enable Pulse
Positive Width
Address Setup
Time
Address Hold Time
SYMBOL
(1) TELQV
GROUP A
SUB-
GROUPS
9, 10, 11
HM-6518B/883
TEMPERATURE
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
MIN
-
HM-6518/883
MIN
-
MAX
180
MAX
250
UNITS
ns
(2) TAVQV
9, 10, 11
-
180
-
250
ns
(3) TSLQX
9, 10, 11
5
-
5
-
ns
(4) TWLQZ
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-
120
-
160
ns
(5) TSHQZ
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-
120
-
160
ns
(6) TELEH
VCC = 4.5 and
5.5V
VCC = 4.5 and
5.5V
VCC = 4.5 and
5.5V
VCC = 4.5 and
5.5V
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
180
-
250
-
ns
(7) TEHEL
9, 10, 11
100
-
100
-
ns
(8) TAVEL
9, 10, 11
0
-
0
-
ns
(9) TELAX
9, 10, 11
40
-
50
-
ns
Data Setup Time
(10) TDVWH
9, 10, 11
80
-
110
-
ns
Data Hold Time
(11) TWHDX
VCC = 4.5 and
5.5V
(12) TWLSH
VCC = 4.5 and
5.5V
VCC = 4.5 and
5.5V
VCC = 4.5 and
5.5V
VCC = 4.5 and
5.5V
9, 10, 11
0
-
0
-
ns
Chip Select Write
Pulse Setup Time
Chip Enable Write
Pulse Setup Time
Chip Select Write
Pulse Hold Time
Chip Enable Write
Pulse Hold Time
Write Enable Pulse
Width
Read or Write
Cycle Time
9, 10, 11
100
-
130
-
ns
(13) TWLEH
9, 10, 11
100
-
130
-
ns
(14) TSLWH
9, 10, 11
100
-
130
-
ns
(15) TELWH
9, 10, 11
100
-
130
-
ns
(16) TWLWH
VCC = 4.5 and
5.5V
(17) TELEL
VCC = 4.5 and
5.5V
9, 10, 11
100
-
130
-
ns
9, 10, 11
280
-
350
-
ns
NOTES:
1. All voltages referenced to device GND.
2. Input pulse levels: 0.8V to VCC -2.0V; input rise and fall times: 5ns (max); input and output timing reference level: 1.5V; output load:
-1TTL gate equivalent, CL = 50pF (min) - for CL greater than 50pF, access time is derated by 0.15ns per pF.
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