HN3C11F datasheet, PDF - EEWORLD Datasheet

HN3C11F: DescriptionNPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS); CategoryDiscrete semiconductor The transistor; File Size86KB，1 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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HN3C11F Overview

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.04 A
Collector-based maximum capacity	1.15 pF
Collector-emitter maximum voltage	10 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz

	HN3C11F	HN3C10F
Description	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
Maker	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.04 A	0.08 A
Collector-based maximum capacity	1.15 pF	1.15 pF
Collector-emitter maximum voltage	10 V	12 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50	80
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e0	e0
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	10000 MHz	7000 MHz

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