M295V100-T120N3R datasheet, PDF

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M295V100-T120N3R: Description1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory; File Size191KB，30 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M295V100-T120N3R Overview

1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

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M29F100T

M29F100B

1 Mbit (128Kb x8 or 64Kb x16, Boot Block)

Single Supply Flash Memory

10% SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

FAST ACCESS TIME: 70ns

FAST PROGRAMMING TIME

– 10

s by Byte / 16

s by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code, M29F100T: 00D0h

– Device Code, M29F100B: 00D1h

DESCRIPTION

The M29F100 is a non-volatile memory that may

be erased electrically at the block or chip level and

programmed in-system on a Byte-by-Byteor Word-

by-Word basis using only a single 5V V

supply.

For Program and Erase operations the necessary

high voltages are generated internally. The device

can also be programmed in standard program-

mers.

The array matrix organisation allows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protected against pro-

graming and erase on programming equipment,

and temporarily unprotected to make changes in

the application. Each block can be programmed

and erased over 100,000 cycles.

July 1998

TSOP48 (N)

12 x 20 mm

SO44 (M)

Figure 1. Logic Diagram

VCC

A0-A15

M29F100T

M29F100B

DQ0-DQ14

DQ15A–1

BYTE

VSS

AI01974

1/30

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