The UT54ACS10 and the UT54ACTS10 are triple three-input
NAND gates. The circuits perform the Boolean functions
Y = A⋅B⋅C or Y = A + B + C in positive logic.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUTS
A
H
L
X
X
B
H
X
L
X
C
H
X
X
L
OUTPUT
Y
L
H
H
H
PINOUTS
14-Pin DIP
Top View
A1
B1
A2
B2
C2
Y2
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
C1
Y1
C3
B3
A3
Y3
14-Lead Flatpack
Top View
A1
B1
A2
B2
C2
Y2
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
C1
Y1
C3
B3
A3
Y3
LOGIC DIAGRAM
A1
B1
C1
Y1
LOGIC SYMBOL
A1
B1
C1
A2
B2
C2
A3
B3
C3
(1)
(2)
(13)
(3)
(4)
(5)
(9)
(10)
(11)
(8)
Y3
(6)
Y2
&
(12)
Y1
A2
B2
C2
A3
B3
C3
Y2
Y3
Note:.
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
1
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
1.8
10
1.6
mW/
MHz
μA
mA
-8
mA
.7V
DD
V
DD
- 0.25
-200
8
200
.5V
DD
.7V
DD
-1
1
0.40
0.25
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
V
V
OH
V
I
OS
I
OL
mA
mA
3
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
4
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V
±
10%; V
SS
= 0V
1
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
Last time I was talking about a bug in LPC11CXX, in which I mentioned that the interrupt vector table has three mappings: ROM, RAM, and FLASH
When the default is FLASH, when you use the program to rea...
[color=#000000][color=black]Topic: Prospects for the development of electronicization of China's automobile and parts industry[/color][/color] [color=#000000][color=black][color=#000000]Guest speaker:...
I. Common errors in schematics (1) ERC reports that the pin is not connected to the signal: a. The I/O properties of the pin were defined when the package was created; b. Inconsistent grid properties ...
[b][size=5][color=red]Please help me solve this problem: [/color][/size][/b] [b][size=5][color=red] Since my laptop does not have a parallel port, and the download cable given to me by my instructor i...
According to foreign media reports, Ford Motor has applied to the U.S. Patent and Social Security Administration (USPTO) for a patent for a remote vehicle control system that may be used in future ...[Details]
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[Details]
In the electronics manufacturing industry, surface mount technology (SMT) placement machines are core equipment for production lines. However, with many different models available on the market, ch...[Details]
According to Nikkei, Japan has performed poorly in responding to China's power semiconductor challenges.
There are five major companies in Japan's power chip market: Mitsubishi Electric,...[Details]
1. Fault phenomenon and cause analysis
1. During the operation of the equipment, the expansion sleeve is subjected to a large torque, and the mating surfaces of the shaft and the sleeve move...[Details]
Chinese characters are extensive and profound, and there are many different names for ESD tubes. How many of them do you know?
As far as I know, ESD diodes are currently known as ESD p...[Details]
"We have successfully launched the first version of our dedicated chip for EMB brake-by-wire. Second-generation samples have also been successfully completed, and we are actively planning a third-g...[Details]
In the field of communications power supplies, AC/DC rectifier power supplies are called primary power supplies or basic power supplies, while DC/DC converters are called secondary power supplies. ...[Details]
Tires are a very important component for cars. They are related to the driving experience of the vehicle. We are almost inseparable from cars in our daily lives. For tires, according to the role of...[Details]
New version helps developers build secure and trustworthy embedded systems
Shanghai, China—August 21, 2025—
QNX, a division of BlackBerry Ltd., today announced the release of QNX...[Details]
The composition of the water heater
The water heater itself is divided into the following parts:
1. Water tank.
This is where the water heater is filled with water and where the wate...[Details]
When American cartoonist Chester Gould sketched the watch on Dick Tracy's wrist, he had no idea that science fiction would become reality 70 years later. As a comic strip artist, Gould imagined fut...[Details]
Facial recognition, a biometric technology that uses facial features to authenticate identity, has rapidly become a global market hotspot in recent years as the technology has entered practical use...[Details]
01. Introduction
As in-vehicle networks migrate from the CAN
bus
to
Ethernet
, traditional millisecond-level synchronization accuracy can no longer meet the requirements of mul...[Details]
The drive shaft is the shaft in a universal joint that transmits power. As a high-speed, low-support rotating body, its dynamic balance is crucial. Generally, drive shafts undergo dynamic balancing...[Details]
NXP MCU
京公网安备 11010802033920号
EEWORLD
