934067426115 datasheet, PDF - EEWORLD Datasheet

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934067426115: DescriptionPower Field-Effect Transistor, 12.3A I(D), 80V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235; CategoryDiscrete semiconductor The transistor; File Size462KB，13 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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934067426115 Overview

Power Field-Effect Transistor, 12.3A I(D), 80V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

934067426115 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	PLASTIC, POWER-SO8, LFPAK56-4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	9.02 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	12.3 A
Maximum drain-source on-resistance	0.098 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-235
JESD-30 code	R-PSSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	49 A
Guideline	AEC-Q101; IEC-60134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK7Y98-80E

20 February 2013

N-channel 80 V, 98 mΩ standard level MOSFET in LFPAK56

Product data sheet

1. General description

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using

TrenchMOS technology. This product has been designed and qualified to AEC Q101

standard for use in high performance automotive applications.

2. Features and benefits

•

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True standard level gate with V

GS(th)

rating of greater than 1 V at 175 °C

3. Applications

•

12 V, 24 V and 48 V Automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

Conditions

≥ 25 °C; T

≤ 175 °C

= 10 V; T

= 25 °C;

Fig. 1

= 25 °C;

Fig. 2

= 10 V; I

= 5 A; T

= 25 °C;

Fig. 11

Min

Typ

Max

12.3

Unit

Static characteristics

drain-source on-state

resistance

gate-drain charge

mΩ

Dynamic characteristics

= 10 V; I

= 5 A; V

= 64 V;

= 25 °C;

Fig. 13; Fig. 14

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934067426115 Related Products

	934067426115
Description	Power Field-Effect Transistor, 12.3A I(D), 80V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	PLASTIC, POWER-SO8, LFPAK56-4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	9.02 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	12.3 A
Maximum drain-source on-resistance	0.098 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-235
JESD-30 code	R-PSSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	49 A
Guideline	AEC-Q101; IEC-60134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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