50RIA Series
Vishay Semiconductors
Medium Power Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/µs option
• Superior surge capabilities
• Standard package
• Metric threads version available
TO-208AC (TO-65)
RoHS
COMPLIANT
• Types up to 1200 V V
DRM
/V
RRM
• RoHS compliant
TYPICAL APPLICATIONS
• Phase control applications in converters
PRODUCT SUMMARY
I
T(AV)
50 A
• Lighting circuits
• Battery charges
• Regulated power supplies and temperature and speed
control circuit
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Typical
TEST CONDITIONS
VALUES
50
T
C
94
80
1430
A
1490
10.18
9.30
100 to 1200
110
- 40 to 125
V
µs
°C
kA
2
s
UNITS
A
°C
A
I
2
t
Document Number: 93711
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
50RIA Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
20
40
50RIA
60
80
100
120
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
(1)
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
(2)
V
150
300
500
700
900
1100
1300
15
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Medium Power Thyristors
(Stud Version), 50 A
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
(2)
For voltage pulses with t
5 ms
p
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° sinusoidal conduction
VALUES
50
94
80
1430
1490
1200
Sinusoidal half wave,
initial T
J
= T
J
maximum
1255
10.18
9.30
7.20
6.56
101.8
0.94
1.08
4.08
m
( x I
T(AV)
< I < 20 x
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 157 A, T
J
= 25 °C
T
J
= 25 °C, anode supply 22 V, resistive load,
initial I
T
= 2 A
Anode supply 6 V, resistive load
3.34
1.60
200
400
V
mA
kA
2
s
V
kA
2
s
A
UNITS
A
°C
A
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
( x I
T(AV)
< I < 20 x
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93711
Revision: 19-Sep-08
50RIA Series
Medium Power Thyristors
(Stud Version), 50 A
SWITCHING
PARAMETER
Maximum rate of
rise of turned-on current
Typical delay time
Typical turn-off time
V
DRM
600 V
V
DRM
1600 V
dI/dt
SYMBOL
TEST CONDITIONS
T
C
= 125 °C, V
DM
= Rated V
DRM
,
Gate pulse = 20 V, 15
,
t
p
= 6 µs, t
r
= 0.1 µs maximum
I
TM
= (2 x rated dI/dt) A
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A dc resistive circuit
Gate pulse = 10 V, 15
source, t
p
= 20 µs
T
C
= 125 °C, I
TM
= 50 A, reapplied dV/dt = 20 V/µs
dIr/dt = - 10 A/µs, V
R
= 50 V
VALUES
200
A/µs
100
0.9
µs
110
UNITS
Vishay Semiconductors
t
d
t
q
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES
200
500
(1)
V/µs
UNITS
Note
(1)
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
I
GD
V
GD
T
J
= - 40 °C
T
J
= 25 °C
T
J
= T
J
maximum,
V
DRM
= Rated voltage
T
J
= T
J
maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
VALUES
10
W
2.5
2.5
20
V
10
250
100
50
3.5
V
2.5
5.0
mA
mA
A
UNITS
DC gate voltage not to trigger
0.2
V
Document Number: 93711
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
50RIA Series
Vishay Semiconductors
Medium Power Thyristors
(Stud Version), 50 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Allowable mounting torque
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
- 40 to 125
0.35
K/W
0.25
3.4
+ 0 - 10 %
(30)
2.3
+ 0 - 10 %
UNITS
°C
N·m
(lbf · in)
g
oz.
(20)
28
1.0
TO-208AC (TO-65)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.078
0.094
0.120
0.176
0.294
RECTANGULAR CONDUCTION
0.057
0.098
0.130
0.183
0.296
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
50RIA Series
R
thJC
(DC) = 0.35 K/W
Maximum Allowable Case Temperature (°C)
130
130
50RIA Series
R
thJC
(DC) = 0.35 K/W
120
120
Conduction Angle
110
Conduction Period
110
30°
100
60°
90°
120°
180°
90
0
10
20
30
40
50
60
Average On-state Current (A)
100
90
60°
30°
80
0
10
20
30
90°
120°
180°
40
50
60
DC
70
80
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93711
Revision: 19-Sep-08
50RIA Series
Medium Power Thyristors
(Stud Version), 50 A
Maximum Average On-state Power Loss (W)
80
70
60
50
40
30
Conduction Angle
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
180°
120°
90°
60°
30°
RMS Limit
1300
1200
1100
1000
900
800
700
600
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
20
10
0
0
10
20
50RIA Series
T = 125°C
J
50RIA Series
30
40
50
10
100
Average On-state Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 3 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
100
90
80
70
60
50
RMS Limit
40
30
20
10
0
0
10
20
30
40
50
60
70
80
Average On-state Current (A)
Conduction Period
1500
Peak Half Sine Wave On-state Current (A)
DC
180°
120°
90°
60°
30°
1400
1300
1200
1100
1000
900
800
700
600
500
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
50RIA Series
T = 125°C
J
50RIA Series
0.1
Pulse Train Duration (s)
1
Fig. 4 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
100
T = 25°C
J
10
T = 125°C
J
50RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Document Number: 93711
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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