BSO307N datasheet, PDF - EEWORLD Datasheet

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BSO307N: DescriptionPower Field-Effect Transistor, 4.2A I(D), 30V, 0.075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size79KB，8 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSO307N Overview

Power Field-Effect Transistor, 4.2A I(D), 30V, 0.075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BSO307N Parametric

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	4.2 A
Maximum drain-source on-resistance	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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Preliminary data

BSO307N

SIPMOS

Small-Signal Transistor

• Dual N-channel

• Enhancement mode

• Logic Level

• Avalanche rated

•

GS(th)

= 1.2 ...2.0 V

Type

BSO307N

30 V

4.2 A

DS(on)

0.075

Ω

Package Marking

P-DSO-8

Ordering Code

Q. . . . - . . . .

Electrical Characteristics,

= 25°C, unless otherwise specified

Maximum Ratings

Parameter

Continuous drain current,

one channel active

Symbol

Values

4.2

Unit

Dpuls

16.8

= 25 °C

Pulsed drain current,

one channel active

= 25 °C

Avalanche energy, single pulse

= 4.2 A,

= 25 V,

= 25

Ω

= 6.23 mH,

= 25 °C

Avalanche current, repetitive,limited by

j(max)

Avalanche energy, periodic limited by

j(max)

Reverse diode dv/dt

dv/dt

4.2

KV/µs

= 4.2 A,

= 20 V, di/dt = 200 A/µs

jmax

= 150 °C

Gate source voltage

Power dissipation,

one channel avtive

tot

= 25 °C

Chip or operating temperature

Storage temperature

IEC climatic category, DIN IEC 68-1

Semiconductor Group

stg

-55 ... + 150

55 / 150 / 56

°C

31/10/1997

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