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MRUS51S

Description
Micro power Built-in IC ultra-minimum MR sensor
File Size51KB,3 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet View All

MRUS51S Overview

Micro power Built-in IC ultra-minimum MR sensor

New Product DATA SHEET
MR Sensor
MRUS51S
Micro power Built-in IC ultra-minimum MR sensor
1.FEATURES
High-sensitivity (1.5mT(typ.) ) & Ultra-minimum Size & Low source supply
*Micro power (6µW(typ):Vcc=1.8V)
(suited for battery-operation)
*Ultra-small size
MR(Magneto-resistance)sensor
Volume and mounting area are
70% smaller
than MRSS22L.
*
Height is about
50 % lower
than
MRSS22L.
*Operating in one way magnetic field
*Operating with independent pole
(easily manufacture)
*Superior Temperature stability
*Lead free goods
2.Fundamental Operation
2-1.Direction of Magnetic Field
1.Dimension (Unit:mm)
Gnd
1.45
1.2
Vcc
Out
1.4
Max0.55
2-2.Circuit Block
V½½
R1
R2
SAMPLING
LOGIC
LATCH
C-MOS
Operation
OUT
Op-Amp
R3
R4
SWITCH
R1 ∼R4 :MR Elements
GND
2-3.Performance Characteristics (25+3 ˚C)
Operating require
Condition
When power switch is ON
When magnetic field is applied
When magnetic field is applied
H = 0 mT (
Magnetic Flux Density)
H
≧2.2
mT
(
Magnetic Flux Density)
H
≦0.5
mT
(
Magnetic Flux Density
)
Output
Voltage
Hi-level
Lo-level
Hi-level
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