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M1MA152WAT1

Description
Common Anode Silicon Dual Switching Diodes
CategoryDiscrete semiconductor    diode   
File Size66KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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M1MA152WAT1 Overview

Common Anode Silicon Dual Switching Diodes

M1MA152WAT1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Parts packaging codeSC-59
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.5 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.01 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by M1MA151WAT1/D
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in
ultra high speed switching applications. These devices are housed in the SC–59
package which is designed for low power surface mount applications.
Fast trr, < 10 ns
Low CD, < 15 pF
Available in 8 mm Tape and Reel
Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel.
ANODE
3
M1MA151WAT1
M1MA152WAT1
Motorola Preferred Devices
SC–59 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
3
2
1
CATHODE
2
1
MAXIMUM RATINGS
(TA = 25°C)
Rating
Reverse Voltage
M1MA151WAT1
M1MA152WAT1
Peak Reverse Voltage
M1MA151WAT1
M1MA152WAT1
Forward Current
Single
Dual
Peak Forward Current
Single
Dual
Peak Forward Surge Current
Single
Dual
IFSM(1)
IFM
IF
VRM
Symbol
VR
Value
40
80
40
80
100
150
225
340
500
750
Unit
Vdc
CASE 318D–03, STYLE 5
SC–59
Vdc
mAdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
200
150
– 55 to + 150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
Characteristic
Reverse Voltage Leakage Current
M1MA151WAT1
M1MA152WAT1
Forward Voltage
Reverse Breakdown Voltage
M1MA151WAT1
M1MA152WAT1
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
IR
VF
VR
CD
trr(2)
Condition
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100
µA
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100
Ω,
Irr = 0.1 IR
Min
40
80
Max
0.1
0.1
1.2
15
10
Unit
µAdc
Vdc
Vdc
pF
ns
REV 3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1

M1MA152WAT1 Related Products

M1MA152WAT1 M1MA152WA M1MA151WAT1
Description Common Anode Silicon Dual Switching Diodes Common Anode Silicon Dual Switching Diodes Common Anode Silicon Dual Switching Diodes
Maker Motorola ( NXP ) - Motorola ( NXP )
Parts packaging code SC-59 - SC-59
package instruction R-PDSO-G3 - R-PDSO-G3
Contacts 3 - 3
Reach Compliance Code unknow - unknow
ECCN code EAR99 - EAR99
Configuration COMMON ANODE, 2 ELEMENTS - COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON - SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V - 1.2 V
JESD-30 code R-PDSO-G3 - R-PDSO-G3
Maximum non-repetitive peak forward current 0.5 A - 0.5 A
Number of components 2 - 2
Number of terminals 3 - 3
Maximum operating temperature 150 °C - 150 °C
Maximum output current 0.1 A - 0.1 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Maximum power dissipation 0.2 W - 0.2 W
Certification status Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 80 V - 40 V
Maximum reverse current 0.1 µA - 0.1 µA
Maximum reverse recovery time 0.01 µs - 0.01 µs
surface mount YES - YES
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
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