EEWORLDEEWORLDEEWORLD

Part Number

Search

HX6356KVFT

Description
32K x 8 STATIC RAM-SOI
File Size140KB,12 Pages
ManufacturerETC
Download Datasheet View All

HX6356KVFT Overview

32K x 8 STATIC RAM-SOI

Aerospace Electronics
32K x 8 STATIC RAM—SOI
FEATURES
RADIATION
• Fabricated with RICMOS
IV Silicon on Insulator (SOI)
0.75
µm
Process (L
eff
= 0.6
µm)
• Total Dose Hardness through 1x10 rad(SiO
2
)
• Neutron Hardness through 1x10
14
cm
-2
• Typical Operating power < 15 mW/MHz
• Dynamic and Static Transient Upset Hardness
through 1x10
11
rad(Si)/s
• Dose Rate Survivability through 1x10
12
rad(Si)/s
• Soft Error Rate of <1x10
-10
upsets/bit-day
in Geosynchronous Orbit
• Latchup Free
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V
±
10% Power Supply
6
HX6356
OTHER
• Listed On SMD# 5962-95845
• Fast Read/Write Cycle Times
17 ns (Typical)
25 ns (-55 to 125°C)
• Packaging Options
- 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
- 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in harsh, transient
radiation environments. The RAM operates over the full
military temperature range and requires only a single 5 V
±
10% power supply. The RAM is available with either TTL or
CMOS compatible I/O. Power consumption is typically less
than 15 mW/MHz in operation, and less than 5 mW when
de-selected. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS
IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and pro-
cess hardening techniques. The RICMOS
IV process is a
5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75
µm
(0.6
µm
effective gate length—L
eff
). Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability. A 7 transistor
(7T) memory cell is used for superior single event upset
hardening, while three layer metal power bussing and the
low collection volume SIMOX substrate provide improved
dose rate hardening.
Those who have participated in Shengqun come and have a look~~
[i=s]This post was last edited by paulhyde on 2014-9-15 09:38[/i]I am using Holtek's microcontroller to make something, but I am not familiar with its C control. Is there anyone who has the same exper...
382502635 Electronics Design Contest
How does the kernel driver execute Windows internal commands?
In VC, we can use the following code to execute some DOS commands: char Command[100]; while(1) { memset(Command,'\0',100); printf(">>"); scanf("%[^]",Command); getchar(); if( (memcmp(Command,"exit",4)...
zhousw08 Embedded System
[SC8905 EVM Evaluation] Power Supply Ripple Test
By the way, I did a ripple control test: input 5V3A switching power supply output setting 9.2VNote: The following results are for the probes clamped on the test posts of the EMC board, and the spacing...
icebabycool Domestic Chip Exchange
Mbed OS changes the way it is released
Recently, MBed announced a change in the distribution method on the official blogFrom: https://os.mbed.com/blog/entry/Changeof ... seprocess/OverviewIn the past few months, we have been considering ch...
dcexpert DIY/Open Source Hardware
Hot cotton jacket begging for IC Layout data sharing
I have some information about IC layout, please share it with me: For example: VLSI DESIGN, CMOS IC LAYOUT, IC LAYOUT, NAND2 IC LAYOUT, NETLIST, DRC, LVS related content. I will be very grateful...
hustvic Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2767  1496  1823  2864  1710  56  31  37  58  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号