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HY57V653220BLTC-8

Description
Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Categorystorage    storage   
File Size78KB,10 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric Compare View All

HY57V653220BLTC-8 Overview

Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

HY57V653220BLTC-8 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts86
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
JESD-30 codeR-PDSO-G86
JESD-609 codee6
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals86
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX32
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
width10.16 mm
Base Number Matches1
HY57V653220B
4 Banks x 512K x 32Bit Synchronous DRAM
Preliminary
DESCRIPTION
The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applica-
tions which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.
HY57V653220B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and out-
puts are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very
high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
JEDEC standard 3.3V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 86pin TSOP-II with 0.5mm of
pin pitch
All inputs and outputs referenced to positive edge of
system clock
Data mask function by DQM0,1,2 and 3
Internal four banks operation
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
Burst Read Single Write operation
ORDERING INFORMATION
Part No.
HY57V653220BTC-6
HY57V653220BTC-7
HY57V653220BTC-8
HY57V653220BTC-10
HY57V653220BLTC-6
HY57V653220BLTC-7
HY57V653220BLTC-8
HY57V653220BLTC-10
Clock Frequency
166MHz
143MHz
Power
Organization
Interface
Package
Normal
125MHz
100MHz
166MHz
143MHz
Low power
125MHz
100MHz
4Banks x 512Kbits
x32
LVTTL
400mil 86pin TSOP II
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.7/Apr.99

HY57V653220BLTC-8 Related Products

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Description Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Maker SK Hynix SK Hynix SK Hynix SK Hynix
Parts packaging code TSOP2 TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP2, TSOP2, TSOP2,
Contacts 86 86 86 86
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 5.5 ns 5.5 ns 6 ns
JESD-30 code R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86
JESD-609 code e6 e6 e6 e6
length 22.22 mm 22.22 mm 22.22 mm 22.22 mm
memory density 67108864 bit 67108864 bit 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 32 32 32 32
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 86 86 86 86
word count 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 2MX32 2MX32 2MX32 2MX32
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface TIN BISMUTH TIN BISMUTH TIN BISMUTH TIN BISMUTH
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.5 mm 0.5 mm 0.5 mm 0.5 mm
Terminal location DUAL DUAL DUAL DUAL
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm
Base Number Matches 1 1 1 1
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