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TSF20H200C C0G

Description
DIODE ARRAY SCHOTT 200V ITO220AB
Categorysemiconductor    Discrete semiconductor   
File Size217KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSF20H200C C0G Overview

DIODE ARRAY SCHOTT 200V ITO220AB

TSF20H200C C0G Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io) (per diode)10A
Voltage at different If - Forward (Vf930mV @ 10A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current100µA @ 200V
Operating Temperature - Junction-55°C ~ 150°C
Installation typeThrough hole
Package/casingTO-220-3 fully encapsulated, isolation tab
Supplier device packagingITO-220AB
TSF20H100C thru TSF20H200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting and
on-board DC/DC converters.
MECHANICAL DATA
Case:
ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque: 0.56 Nm max.
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
V
AC
Typ.
I
F
= 5A
Instantaneous forward voltage per diode
( Note1 )
I
F
= 10A
I
F
= 5A
I
F
= 10A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
V
F
I
R
R
θJC
T
J
T
STG
0.64
0.74
0.55
0.63
-
1.5
4.0
Max.
-
0.81
-
0.70
200
10
Typ.
0.68
0.78
0.56
0.63
-
5
4.0
TSF20H
100C
100
TSF20H
120C
120
20
10
120
10000
1500
Max
-
0.87
-
0.69
250
15
Typ.
0.72
0.81
0.58
0.66
-
3
4.5
Max.
-
0.90
-
0.75
100
15
Typ.
0.77
0.83
0.62
0.68
-
-
4.5
Max.
-
0.93
-
0.78
100
15
μA
mA
°C/W
°C
°C
V
TSF20H
150C
150
TSF20H
200C
200
UNIT
V
A
A
V/μs
V
Peak forward surge current, 8.3 ms single half sine-wave superimposed
on rated load per diode
Voltage rate of change (Rated V
R
)
Isolation voltage from terminal to heatsink t = 1 min
- 55 to +150
- 55 to +150
Document Number: DS_D1411024
Version: I14

TSF20H200C C0G Related Products

TSF20H200C C0G TSF20H100C C0G TSF20H120C C0G TSF20H150C C0G TSF20H100CC0G TSF20H200CC0G
Description DIODE ARRAY SCHOTT 200V ITO220AB DIODE ARRAY SCHOTT 100V ITO220AB DIODE ARRAY SCHOTT 120V ITO220AB DIODE ARRAY SCHOTT 150V ITO220AB Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
Diode type Schottky Schottky Schottky Schottky RECTIFIER DIODE RECTIFIER DIODE
Diode configuration 1 pair of common cathodes 1 pair of common cathodes 1 pair of common cathodes 1 pair of common cathodes - -
Voltage - DC Reverse (Vr) (Maximum) 200V 100V 120V 150V - -
Current - average rectification (Io) (per diode) 10A 10A 10A 10A - -
Voltage at different If - Forward (Vf 930mV @ 10A 810mV @ 10A 870mV @ 10A 750mV @ 10A - -
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) - -
Current at different Vr - Reverse leakage current 100µA @ 200V 200µA @ 100V 250µA @ 120V 100µA @ 150V - -
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C - -
Installation type Through hole Through hole Through hole Through hole - -
Package/casing TO-220-3 fully encapsulated, isolation tab TO-220-3 fully encapsulated, isolation tab TO-220-3 fully encapsulated, isolation tab TO-220-3 fully encapsulated, isolation tab - -
Supplier device packaging ITO-220AB ITO-220AB ITO-220AB ITO-220AB - -
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