HYB514175BJ-50- datasheet, PDF

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HYB514175BJ-50-: Description256k x 16-Bit EDO-DRAM; File Size182KB，22 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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HYB514175BJ-50- Overview

256k x 16-Bit EDO-DRAM

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256k

16-Bit EDO-DRAM

HYB 514175BJ-50/-55/-60

Advanced Information

•

262 144 words by 16-bit organization

0 to 70

°C

operating temperature

Fast access and cycle time

RAS access time:

50 ns (-50 version)

55 ns (-55 version)

60 ns (-60 version)

CAS access time:

13 ns (-50 & -55 version)

15 ns (-60 version)

Cycle time:

89 ns (-50 version)

94 ns (-55 version)

104 ns (-60 version)

Hyper page mode (EDO) cycle time

20 ns (-50 & -55 version)

25 ns (-60 version)

High data rate

50 MHz (-50 & -55 version)

40 MHz (-60 version)

Single + 5 V (± 10 %) supply with a built-in

generator

• Low Power dissipation

max. 1100 mW active (-50 version)

max. 1045 mW active (-55 version)

max. 935 mW active (-60 version)

• Standby power dissipation

11 mW standby (TTL)

5.5 mW max. standby (CMOS)

• Output unlatched at cycle end allows

two-dimensional chip selection

• Read, write, read-modify write,

CAS-before-RAS refresh, RAS-only

refresh, hidden-refresh and hyper page

(EDO) mode capability

• 2 CAS/1 WE control

• All inputs and outputs TTL-compatible

• 512 refresh cycles/16 ms

• Plastic Packages:

P-SOJ-40-1 400 mil width

•

Semiconductor Group

1998-10-01

HYB514175BJ-50- Related Products

	HYB514175BJ-50-	Q67100-Q2100	Q67100-Q2073	Q67100-Q2072	HYB514175BJ-50	HYB514175BJ-55	HYB514175BJ-60
Description	256k x 16-Bit EDO-DRAM	256k x 16-Bit EDO-DRAM	256k x 16-Bit EDO-DRAM	256k x 16-Bit EDO-DRAM	256k x 16-Bit EDO-DRAM	256k x 16-Bit EDO-DRAM	256k x 16-Bit EDO-DRAM

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