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HYR1825640G-745

Description
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
Categorystorage    storage   
File Size387KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

HYR1825640G-745 Overview

Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)

HYR1825640G-745 Parametric

Parameter NameAttribute value
Parts packaging codeDMA
package instructionDIMM, DIMM184,40
Contacts184
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
access modeBLOCK ORIENTED PROTOCOL
Maximum access time45 ns
Other featuresSELF CONTAINED REFRESH
Maximum clock frequency (fCLK)711 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density4831838208 bit
Memory IC TypeRAMBUS DRAM MODULE
memory width18
Number of functions1
Number of ports1
Number of terminals184
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
organize256MX18
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply1.8/2.5,2.5 V
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.63 V
Minimum supply voltage (Vsup)2.37 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
Base Number Matches1
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Direct RDRAM RIMM Modules
(with 288 Mbit RDRAMs)
Overview
The Direct Rambus
RIMM
module is a general purpose high-performance memory subsystem
suitable for use in a broad range of applications including computer memory, personal computers,
workstations, and other applications where high bandwidth and low latency are required.
The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™)
devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The
use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while
using conventional system and board design technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed, memory transactions. The separate control and data buses with independent
row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports
up to four simultaneous transactions per device.
Form Factor
The Rambus RIMM modules are offered in a 184-pad 1 mm edge connector pad pitch form factor
suitable for 184 contact RIMM connectors. The RIMM module is suitable for desktop and other
system applications. The next figure shows an eight device Rambus RIMM module without heat
spreader.
Features
• High speed 800, 711 & 600 MHz RDRAM
storage
• 184 edge connector pads with 1 mm pad
spacing
• Maximum module PCB size:
133.5 mm
×
31.75 mm
×
1.37 mm
(5.25”
×
1.25”
×
0.05”)
• Each RDRAM has 32 banks, for a total of
512, 256,128 or 64 banks on each 512/
576 MB, 256/288MB,128/144 or 64/72 MB
module respectively.
,
• Gold plated edge connector pad contacts
• Serial Presence Detect (SPD) support
• Operates from a 2.5 V supply (± 5%)
• Low power and powerdown self refresh
modes
• Separate Row and Column buses for higher
efficiency
Fig.1 : Rambus RIMM module
(without heat spreader)
INFINEON Technologies
1
7.01

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Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
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